UN8231A ,Composite DeviceAbsolute Maximum Ratings T = 25°Ca+0.10 +0.10Parameter Symbol Rating Unit 0.45 0.45–0.05 –0.051.05 ..
UN9110 ,Silicon PNP epitaxial planer transistorTransistors with built-in ResistorUN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/911D/911E/911 ..
UN9110J ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN9111 ,Silicon PNP epitaxial planer transistorAbsolute Maximum Ratings (Ta=25˚C)n3 : CollectorParameter Symbol Ratings Unit SS–Mini Flat Type Pa ..
UN9111J ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UN9112 ,Silicon PNP epitaxial planer transistorTransistors with built-in ResistorUN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/911D/911E/911 ..
UPD4110-2 ,High-speed line bufferN iirt: ELECTRONICS INC
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36E 1) I EH27525 tl05HAiil7 i? INECE
APPLICATION NOTE "
I4110 ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UN8231-UN8231A
