UN5213 ,Composite DeviceTransistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUn ..
UN5214 ,Composite DeviceTransistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUn ..
UN5215 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN5215 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN5216 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN5217 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD4110-2 ,High-speed line bufferN iirt: ELECTRONICS INC
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36E 1) I EH27525 tl05HAiil7 i? INECE
APPLICATION NOTE "
I4110 ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UN5210-UN5211-UN5212-UN5213-UN5214-UN5215-UN5216-UN5217-UN5219-UN521D-UN521E-UN521F-UN521K-UN521L-UN521M-UN521N-UN521T-UN521V-UNR5213-UNR5215-UNR5216-UNR521E-UNR521K-UNR521T-UNR521V