UN5154 ,Composite DeviceAbsolute Maximum Ratings T = 25°Ca1: BaseParameter Symbol Rating Unit2: Emitter3: CollectorCollect ..
UN5210 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN5211 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN5212 ,Composite DeviceTransistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUn ..
UN5212 ,Composite DeviceTransistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUn ..
UN5213 ,Composite DeviceTransistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUn ..
UPD4110-2 ,High-speed line bufferN iirt: ELECTRONICS INC
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I4110 ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UN5154-UNR5154
