UN5111 ,Composite DeviceTransistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUn ..
UN5111 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UN5112 ,Composite DeviceTransistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUn ..
UN5113 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN5114 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN5114 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UPD4110-2 ,High-speed line bufferN iirt: ELECTRONICS INC
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I4110 ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UN5110-UN5111-UN5112-UN5113-UN5114-UN5115-UN5116-UN5117-UN5119-UN511D-UN511E-UN511F-UN511H-UN511L-UN511M-UN511N-UN511T-UN511V-UNR5110-UNR5113-UNR5116-UNR5117-UNR511T