UN421F ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UN421K ,Composite DeviceFeatures 0.75 max.• Costs can be reduced through downsizing of the equipment andreduction of the nu ..
UN421L ,Composite DeviceFeatures 0.75 max.• Costs can be reduced through downsizing of the equipment andreduction of the nu ..
UN4222 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN4223 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaRParameter Symbol Rating Unit1CBCollector-base voltage (Emitter ..
UN4224 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD4110-2 ,High-speed line bufferN iirt: ELECTRONICS INC
th‘f‘
36E 1) I EH27525 tl05HAiil7 i? INECE
APPLICATION NOTE "
I4110 ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UN4210-UN4211-UN4212-UN4213-UN4214-UN4216-UN4217-UN4218-UN4219-UN421E-UN421F-UN421K-UN421L
