UN2154 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN2210 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN2210 ,Composite DeviceTransistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transi ..
UN2211 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN2212 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN2213 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UPD29F032204ALGZ-A85BX-MJH ,32M-bit(4M-wordx8-bit/2M-wordx16-bit) FlashmemoryDATA SHEETMOS INTEGRATED CIRCUITµµµµ PD29F032204AL-X32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH ..
UPD29F064115F9-EB90X-CD5 ,64M-bit(4M-wordx16-bit)Flash memoryFeatures• Four bank organization enabling simultaneous execution of program / erase and read• High- ..
UPD30121F1-131-GA1 ,VR4121TM 64-/32-BIT MICROPROCESSORFEATURES• Employs 64-bit MIPS architecture • Memory controller (ROM, EDO-type DRAM,• Conforms to MI ..
UPD30121F1-168-GA1 ,VR4121TM 64-/32-BIT MICROPROCESSORDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD30121TMVR412164-/32-BIT MICROPROCESSORDESCRIPTIONTMThe μP ..
UPD30181AYF1-131-GA3 , 64-/32-BIT MICROPROCESSOR
UPD30181GM-66-8ED , 64-/32-Bit Microprocessor
UN2154
