UN2123 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN2123 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN2124 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter ..
UN212X ,Composite DeviceAbsolute Maximum Ratings T = 25°CaR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter ..
UN212Y ,Composite DeviceTransistors with built-in ResistorUNR212x Series (UN212x Series)Silicon PNP epitaxial planar typeUn ..
UN2154 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD28C256CZ-20 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 200 ns.Pin Configuration
The pPD280256 is a 262,144-bit electrically erasable 28-Pin Plastic MP
and ..
UPD28C256CZ-25 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 250 ns.N E C ELECTRONICS INC ELE I) " EHE75E‘5 UDBSLIHE. P17 " NECE
NEG 32
NEC Electronics Inc. CMds ..
UPD28C256CZ-25 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 250 ns.features include software data protection, soft.. Att
ware chip erase, auto erase and programming, ..
UPD29F032204ALGZ-A85BX-MJH ,32M-bit(4M-wordx8-bit/2M-wordx16-bit) FlashmemoryDATA SHEETMOS INTEGRATED CIRCUITµµµµ PD29F032204AL-X32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH ..
UPD29F064115F9-EB90X-CD5 ,64M-bit(4M-wordx16-bit)Flash memoryFeatures• Four bank organization enabling simultaneous execution of program / erase and read• High- ..
UPD30121F1-131-GA1 ,VR4121TM 64-/32-BIT MICROPROCESSORFEATURES• Employs 64-bit MIPS architecture • Memory controller (ROM, EDO-type DRAM,• Conforms to MI ..
UN2121-UN2122-UN2123-UN2124-UN212X-UN212Y
