UN2119 ,Composite DeviceTransistors with built-in ResistorUNR211x Series (UN211x Series)Silicon PNP epitaxial planar typeUn ..
UN211D ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN211E ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UN211F ,Composite DeviceTransistors with built-in ResistorUNR211x Series (UN211x Series)Silicon PNP epitaxial planar typeUn ..
UN211H ,Composite DeviceTransistors with built-in ResistorUNR211x Series (UN211x Series)Silicon PNP epitaxial planar typeUn ..
UN211L ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD2819C ,PHASE LOCKED LOOP FREQUENCY SYNTHESIZER CMOS LSIFEATURES 0 Programmable divider : divided-by 20 to 7999 (BCD)
I Reference divider l fm=10kHz, 9k ..
UPD2845GR ,1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEMDATA SHEETDATA SHEETCMOS DIGITAL INTEGRATED CIRCUITSPPPPPD2845GR1 V, 1.3 mA, 94MHz PLL S ..
UPD2845GR-E1 ,1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEMDATA SHEETDATA SHEETCMOS DIGITAL INTEGRATED CIRCUITSPPPPPD2845GR1 V, 1.3 mA, 94MHz PLL S ..
UPD28C256CZ-20 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 200 ns.Pin Configuration
The pPD280256 is a 262,144-bit electrically erasable 28-Pin Plastic MP
and ..
UPD28C256CZ-25 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 250 ns.N E C ELECTRONICS INC ELE I) " EHE75E‘5 UDBSLIHE. P17 " NECE
NEG 32
NEC Electronics Inc. CMds ..
UPD28C256CZ-25 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 250 ns.features include software data protection, soft.. Att
ware chip erase, auto erase and programming, ..
UN2110-UN2111-UN2112-UN2113-UN2114-UN2115-UN2115--UN2116-UN2117-UN2118-UN2119-UN211D-UN211E-UN211F-UN211H-UN211L-UN211M-UN211N-UN211V-UNR2111-UNR2115-UNR2116-UNR2118-UNR211D-UNR211E
