UC3610DWTRG4 ,Dual Schottky Diode Bridge 16-SOIC 0 to 70electrical characteristics, all specifications apply to each individual diode, T = 25°C, T = T ,J A ..
UC3610N ,Dual Schottky Diode BridgeUC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004N OR J PACKAGE DW PACKAGETOP VIEW TOP VIE ..
UC3610NG4 ,Dual Schottky Diode Bridge 8-PDIP 0 to 70features high efficiency through lowered forward voltagedrop and decreased reverse recovery time. ..
UC3611DW ,Quad Schottky Diode Arraymaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
UC3611N ,Quad Schottky Diode Arrayfeatures highefficiency through lowered forward voltage dropand decreased reverse recovery time.Thi ..
UC3625DWTRG4 ,Brushless DC Motor Controller 28-SOIC 0 to 70MAXIMUM RATINGSover operating free-air temperature range (unless otherwise noted)VALUE UNITVCC 20Su ..
UMC3NT1G , Dual Common Base−Collector Bias Resistor Transistors
UMC3NT1G , Dual Common Base−Collector Bias Resistor Transistors
UMC5 N , DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
UMC5N , DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
UMC5N-7 , DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
UMC5NT1 , Dual Common Base−Collector Bias Resistor Transistors
UC3610DW-UC3610DWTR-UC3610DWTRG4-UC3610N-UC3610NG4
Dual Schottky Diode Bridge
UC1610
UC3610
SLUS339B − JUNE 1993 − REVISED DECEMBER 2004
DUAL SCHOTTKY DIODE BRIDGE
FEATURES Monolithic Eight-Diode Array Exceptional Efficiency Low Forward Voltage Fast Recovery Time High Peak Current Small Size
DESCRIPTIONThis eight-diode array is designed for
high-current, low duty-cycle applications typical of
flyback voltage clamping for inductive loads. The
dual bridge connection makes this device
particularly applicable to bipolar driven stepper
motors.
The use of Schottky diode technology features
high efficiency through lowered forward voltage
drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both
hermetic CERDIP and copper-leaded plastic
packages. The UC1610 in ceramic is designed for
−55°C to 125°C environments but with reduced
peak current capability. The UC2610 in plastic and
ceramic is designed for −25°C to 125°C
environments also with reduced peak current
capability; while the UC3610 in plastic has higher
current rating over a 0°C to 70°C temperature
range.
AVAILABLE OPTIONS
THERMAL INFORMATIONNOTES:1. Specified θja (junction-to-ambient) is for devices mounted to 5-in2 FR4 PC board with one ounce copper where noted. When
resistance range is given, lower values are for 5-in2 aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm
trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the
end of each trace. θjc data values stated were derived from MIL−STD−1835B. MIL−STD−1835B states that the baseline values shown are worst case
(mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils.
For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11°C/W; flat pack, 10°C/W; pin grid array,
10°C/W.
