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U430-U431
Dual N-Channel silicon junction field-effect transistor
VISHAY
U430/431
Vishay Siliconix
Matched N-Channel Pairs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gts Min (m3) ls Typ (PA) IVGs1 -VGszl Typ (mV)
U430 -1 to -4 -25 IO -1 5 25
U431 Al to -6 -25 IO -1 5 25
FEATURES BENEFITS APPLICATIONS
o Two-Chip Design q Tight Differential Match vs. Current q VWieband Differential Amps
q High Slew Rate q Improved Op Amp Speed, Settling Time Accuracy q High-Speed, Temp-Compensated,
q Low Offset/Drift Voltage q Minimum Input Error/Trimming Requirement Single-Ended Input Amps
. Low Gate Leakage: 15 pA o Insignificant Signal Loss/Error Voltage q High-Speed Comparators
. Low Noise q High System Sensitivity q Impedance Converters
. High CMRR: 75 dB q Minimum Error with Large Input Signals
DESCRIPTION
The U430/431 are matched JFET pairs assembled in a TO-78
These devices offer good power gain even at
package.
frequencies beyond 250 MHz.
The TO-78 package is available with full military processing
(see Military Information).
For similar products, see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage ............................... -25 V Power Dissipation : Per Sidea ........................ 300 mW
Gate Current _................................................ 10 mA Totalb A.......................... 500 mW
Lead Temperature (1/16” from case for 10 sec.) .................. 300 °C
Storage Temperature ................................... -65 to 200°C :mesDerate 2.4 mW/I above 25°C
Operating Junction Temperature .......................... -55 to 150°C b. Derate 4 mW/°C above 25°C
Document Number: 70249
S-04031-Rev. E, 04-Jun-01
www.vishaycom
U430/431
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
U430 U431
Parameter Symbol Test Conditions Typb Min Max Min Max Unit
Static
Gate-Source - -
Breakdown Voltage V(BR)GSS IG - -1 "A’ VDS - O V -35 -25 -25 V
Gate-Source Cutoff Voltage VGS(0ff) Vos = 10 V, ID = 1 nA -1 -4 -2 A,
Saturation Drain Currentb loss VDS = 10 V, VGS = 0 V 12 30 24 60 mA
VGS = -15 V, Vos = 0 V -5 -150 -150 pA
Gate Reverse Current less
I TA = 150''C -10 -150 -150 nA
Vros=10N/,lro=5mA -15 pA
Gate Operating Current ks
l TA=150°C -10 nA
Gate-Source Forward Voltage VGS(F) IG = 10 mA , Vros = 0 V 0.8 1 1 V
Dynamic
Common-Source
Forward Transconductanceb gfs V 10 V I 10 A f 1 kH 15 10 10 ms
= , = m , = Z
Common-Source DS D 100 250 250 13
Output Conductance" gos L
Common-Source
Input Capacitance Ciss 4.5 5 5
V =-10V,V =0V,f=1MHZ F
Common-Source C GS DS 2 2 5 2 5 p
Reverse Transfer Capacitance rss . .
. . - VDS=10V,ID=10mA nV/
Equivalent Input Noise Voltage en f-- 100 Hz 6 \IH_z
High Frequency
Common-Source 14
Forward Transconductance gfs
Common-Source VDs = 10 V, ID = 10 mA
Output Conductance gos f= 100 MHz (h13 mS
Power-Match _ 12
Source Admittance gig
Matching
Differential - -
Gate-Source Voltage Nss1-vss2l VDG - 10 V, ID - 10 mA 25 mV
Saturation Drain bss, - -
Current Ratioc I,,,.-,,,,., VDS - 10 V, VGS - 0 v 0.95 0.9 1 0.9 1
Transconductance Ratioc 'lt: VDS = 10 V, ID = 10 mA, f= 1 kHz 0.95 0.9 1 0.9 1
Gate-Source VGS(off)1
. - VDS = 10 V, ID =1 nA 0.95 0.9 1 0.9 1
Cutoff Voltage Ratio V G S(o ff)2
Differential Gate Current “G1"Gzl VDG = 10 V, ID = 5 mA -2 pA
Common Mode Rejection Ratio CMRR VDG = 5 to 10 V, ID = 10 mA 75 dB
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZBD
b. Pulse test: PW s300 us duty cycle s3%.
C. Assumes smaller value in the numerator.
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Document Number: 70249
S-04031-Reu E, 04-Jun-01
VISHAY
U430/431
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
koss@Vros=10V,VGs=0V
gts@Vos=10V,Vss=0V
f=1kHz
loss — Saturation Drain Current (mA)
0 -1 -2 -3 -4
VGS(ofl) - Gate-Source Cutoff Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
ros@b--1mA,Vss--0V
gos@VDs=1O\/,VGS=0\/,f=1kHz
stmn) — Drain—Source On—Resistance ( Q )
0 -1 -2 -3 -4
Vssom - Gate-Source Cutoff Voltage (V)
Transconductance vs. Gate-Source Voltage
V =-1.5V VDS=1OV
f= 1 kHz
24 TA = -55''C
gfs — Forward Transconductance (m8)
0 -0.4
-0.8 -1.2 -1.6
I/ss - Gate-Source Voltage (V)
(gm) aouemnpuoosumi pJEMJO :1 — 546
(311) aouezonpuoo 1nd1no — S05
IG — Gate Leakage
gfs — Fowvard Transconductance (mS)
gfs — Forward Transconductance (mS)
Gate Leakage Current
a-- 125°C
I 200M
1nA lG@lo=10mA
100 DA lass @125°C
1pA les@25°C
0.1 pA
0 3 4 9 12 15
Vos - Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
v = -3 v Vos = 10 v
f= 1 kHz
0.1 1 10
ID - Drain Current (mA)
Transconductance vs. Gate-Source Voltage
v ---3V vDS=1ov
f=1kHz
O -0.6
-1 .2 -1 .8 -2.4 -3
I/ss - Gate-Source Voltage (V)
Document Number: 70249
S-04031-Rev. E, 04-Jun-01
www.vishaycom
U430/431
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Output Characteristics
v om---r5V
VGS =OV
-0.2 V
2 4 6 8
Vos - Drain-Source Voltage (V)
Output Characteristics
VGsom = -1.5 v VGS = 0 v
0.2 0.4 0.6 0.8
Ws - Drain-Source Voltage (V)
Transfer Characteristics
VGS(off) = -1.5 V Vos = 10 V
f=1 kHz
AM -0.8 -1.2 -1.6
VGS - Gate-Source Voltage (V)
ID — Drain Current (mA) ID — Drain Current (mA)
ID— Drain Current (mA)
Output Characteristics
VGS(off) = -3 V VGS = O V
0 2 4 6 8 10
Vos - Drain-Source Voltage (V)
Output Characteristics
0 0.2 0.4 0.6 0.8 1
Vos - Drain-Source Voltage (V)
Transfer Characteristics
Vssom = -3 V Vos = 10 V
f= 1 kHz
0 -0.6 -1.2 -1.8 -2.4 -3
VGS - Gate-Source Voltage (V)
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Document Number: 70249
S-04031-Reu E, 04-Jun-01
VISHAY U430/431
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
100 100
T = 25"
A A C A = " RL
fit V 1 + RLgos
g 80 80 Assume VDD = 15 V, Vos = 5 V
ol', R = M
8 Vssom = -1.5 v (,s, L ID
5 60 o 60
J? 40 I 40
(, 20 20
1 10 100 0.1 1 10
ID - Drain Current (mA) ID - Drain Current (mA)
Common-Source Input Capacitance Common-Source Reverse Feedback
vs. Gate-Source Voltage Capacitance vs. Gate-Source Voltage
f=1MHz
Ciss— Input Capacitance (pF)
C rss — Reverse Feedback Capacitance (pF)
o -4 -8 -12 -16 -20 0 -4 -8 -12 -16 -20
Vss - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V)
100 Input Admittance vs. Frequency Forward Admittance vs. Frequency
Vros = 10 v
ID = 10 mA
Common-Gate -
Vos = 10 V
ID = 10 mA
Common-Gate
100 200 500 1000 100 200 500 1000
f- Frequency (MHz) f- Frequency (MHz)
Document Number: 70249 www.vishaycom
S-04031-Rev. E, 04-Jun-01 8-5
U430/431
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
En — Noise Voltage (nV IV Hz )
Reverse Admittance vs. Frequency
Vos = 10 V
ID = 10 mA
Common-Gate
100 200 500 1000
f- Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency
VDS=10V
10 100 1 k 10 k 100 k
f- Frequency (Hz)
90$ — Output Conductance (08)
Output Admittance vs. Frequency
Vos = 10 v
ID = 10 mA
Common-Gate
100 200 500 1000
f- Frequency (MHz)
Output Conductance vs. Drain Current
v om=-3V 1/ios=10V
f= 1 kHz
25''C \
0.1 1 10
ID - Drain Current (mA)
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Document Number: 70249
S-04031-Reu E, 04-Jun-01
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