U1898 ,N-channel JFET switch.U1898U1898N-Channel Switch• This device is designed for low level analog switching, sample and hold ..
U1898 ,N-channel JFET switch.applications involving pulsed or low duty cycle operations.
U1898 ,N-channel JFET switch.U1898U1898N-Channel Switch• This device is designed for low level analog switching, sample and hold ..
U1898 ,N-channel JFET switch.applications involving pulsed or low duty cycle operations.
U1899 ,N-channel JFET switch.ELECTRICAL CHARACTERISTICS (rA =.. 25°C unless otherwise specified)
Test Conditions
Parameter ..
U1BC44 ,RECTIFIER SILICON DIFFUSED JUNCTION TYPE FOR HYBRID USE U1BC44,U1GC44,U1JC44 TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE U1BC44,U1GC44,U1JC44 Unit: ..
UCC3807D-3 ,1w vnweDem(j,:]) l llnitrode Products UCC1807-1l-2l-3from Texaslnstruments IE UCC2807-1I-2l-3availab ..
UCC3807N-2 ,1ELECTRICAL CHARACTERISTICS: Unless otherwise stated these specifications apply for TA = --55oC to + ..
UCC3807N-3 ,1ELECTRICAL CHARACTERISTICS: Unless otherwise stated these specifications apply for TA = --55oC to + ..
UCC38083D ,Current Mode Push-Pull PWM With Programmable Slope CompensationFEATURES APPLICATIONS Programmable Slope Compensation High-Efficiency Switch-Mode Power Supplies ..
UCC38083DR ,Current Mode Push-Pull PWM With Programmable Slope Compensationmaximum ratings over operating free-air temperature (unless otherwise noted)Supply voltage, V (I < ..
UCC38084DG4 ,Current Mode Push-Pull PWM With Programmable Slope Compensation 8-SOIC 0 to 70maximum ratings over operating free-air temperature (unless otherwise noted)Supply voltage, V (I < ..
U1898
N-Channel Switch
U1898 U1898 N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from Process 51. • See J111 for characteristics. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Drain-Gate Voltage 40 V DG Gate-Source Voltage -40 V V GS Forward Gate Current 50 mA I GF T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Gate-Source Breakdown Voltage I = 1.0 μA, V = 0 -40 V (BR)GS G DS V Gate-Source Cutoff Voltage V = 20 V, I = 1.0 nA -2.0 -7.0 V GS(off) DS D I Drain-Gate Leakage Current V = 20 V, I = 0 -200 pA DGO DG S On Characteristics I Zero-Gate Voltage Drain Current * V = 20 V, V = 0 15 mA DSS DS GS r I = 1.0 mA, V = 0 50 Ω DS(on) D GS Small Signal Characteristics r Drain-Source On Resistance V = VGS = 0, f= 1.0 kHz 50 Ω ds(on) DS C Input Capacitance V = 20, V = 0, f = 1.0 MHz 16 pF iss DS GS C Reverse Transfer Capacitance V = - 20 V, f = 1.0 MHz 5.0 pF rss GS Switching Characteristics t Turn-On Time I = 6.0 mA 35 ns on D(on) t Turn-Off Time V = 6.0 V 60 ns off GS(off) * Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA ©2004 Rev. A, April 2004
