TYP212 ,SCR FOR OVERVOLTAGE PROTECTIONFEATURES. HIGH SURGE CURRENT CAPABILITY. HIGH dI/dt RATING. HIGH STABILITY AND RELIABILITYDESCRIPTI ..
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TYP212
SCR FOR OVERVOLTAGE PROTECTION
TYP 212 --->TYP 2012SCR FOR OVERVOLTAGE PROTECTION
Symbol Parameter Value UnitIT(RMS) RMS on-state current
(180° conduction angle, single phase circuit)= 110 °C12 A
IT(AV) Average on-state current
(180° conduction angle, single phase circuit)= 110 °C8 A
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)=8.3 ms 315 A=10ms 300
I2tI2t value tp=10ms 450 A2s
ITM Non repetitive surge peak on-state currentTj initial= 25°C)
Exponential pulse wave form=1ms 750 A
dI/dt Critical rateof riseof on-state current
Gate supply:IG= 100 mA diG/dt=1 A/μs
100 A/μs
Tstg
Storage and operating junction temperature range - 40to+ 150 40to+ 125 Maximum lead temperaturefor soldering during10sat 4.5 mm
from case
260 °C
TO220AB(Plastic)
AG HIGH SURGE CURRENT CAPABILITY. HIGH dI/dt RATING. HIGH STABILITY AND RELIABILITY
DESCRIPTION
Symbol Parameter TYP Unit
212 512 1012 2012VDRM
VRRM
Repetitive peak off-state voltage= 125°C 50 100 200 V
ABSOLUTE RATINGS (limiting values)
FEATURESThe TYP 212 ---> 1012 Family uses high perform-
ance glass passivated chips technology.
These Silicon Controlled Rectifiers are designed for
overvoltage protectionin crowbar circuits applica-
tion.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value UnitRth (j-a) Junctionto ambient 60 °C/W
Rth (j-c) DC Junctionto caseforDC 1.3 °C/W
Symbol Test Conditions Value UnitIGT VD=12V (DC) RL=33Ω Tj=25°C MAX 30 mA
VGT VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V
tgt VD=VDRM IG= 200mA
dIG/dt= 1.5A/μs
Tj=25°C TYP 1 μs IG= 1.2 IGT Tj=25°C TYP 60 mA IT= 500mA gate open Tj=25°C MAX 50 mA
VTM ITM= 50A tp= 380μs Tj=25°C MAX 1.5 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj= 125°C2
dV/dt Linear slopeupto VD=67%VDRM
gate open
Tj= 125°C MIN 200 V/μs VD=67%VDRM ITM= 50A VR= 25V
dITM/dt=30 A/μsdVD/dt= 50V/μs
Tj= 125°C TYP 100 μs (AV) =1W PGM= 10W(tp=20 μs) IFGM =4A(tp =20 μs) VRGM =5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TYP 212 ---> TYP 2012
Fig.1: Maximum average power dissipation versus
average on-state current.
Fig.2: Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink+
contact.
Fig.5: Relative variationof gate trigger current versus
junction temperature.
Fig.6: Non repetitive surge peak on-state current
versus numberof cycles.
Fig.3: Average on-state current versus case
temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4: Relative variationof thermal impedance versus
pulse duration.
TYP 212 ---> TYP 2012
Fig.7: Non repetitive surge peak on-state currentfora
sinusoidal pulse with width:t≤ 10 ms, and
corresponding valueof I2t.
Fig.8: On-state characteristics (maximum values).
Fig.9: Peak capacitor discharge current versus pulse
width.
Fig.10: Allowable peak capacitor discharge current
versus initial junction temparature.
TYP 212 ---> TYP 2012
PACKAGE MECHANICAL DATATO220AB Plastic
Cooling method:C
Marking: type number
Weight:2.3g
Recommended torque value:0.8 m.N.
Maximum torque value:1 m.N. JP
=N=
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034
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forthe consequencesof useof such informationnorfor any infringementof patentsor other rightsof third parties which may
result fromits use. Nolicense isgranted byimplication orotherwise underany patentor patent rightsof SGS-THOMSON Microelectronics.
Specifications mentionedin this publication are subjectto change without notice. This publication supersedes and replacesall
information previously supplied.
SGS-THOMSON Microelectronics products arenot authorizedfor useas critical componentsinlife support devicesor systems
without express written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia- Brazil- France- Germany- Hong Kong- Italy- Japan- Korea- Malaysia- Malta- Morocco- The Nether-
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TYP 212 ---> TYP 2012
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