TYN688 ,SCRTYN 682 ---> TYN 692SCR
TYN690 ,SCRFEATURES. HIGH SURGE CAPABILITY. HIGH ON-STATE CURRENT. HIGH STABILITY AND RELIABILITYDESCRIPTIONTh ..
TYN810 ,10A SCRSFEATURESn High surge capabilityGn High on-state currentKn High stability and reliabilityDESCRIPTION ..
TYN812 ,12A SCRs, 800V, sensitivity 30mAFEATURES:ASymbol Value UnitGI12 AT(RMS)KAAV /V600 to 1000 VDRM RRMI0.2 to 15 mA KGT K AAGGDESCRIPTI ..
TYN816 ,16A SCRSFEATURES:ASymbol Value UnitGI16 AT(RMS)KV /V600 to 1000 VDRM RRMAI25 mAGTAKAGKDESCRIPTIONAG2D PAKTh ..
TYN825 ,25A SCRSTN25 and TYNx25 Series®STANDARD 25A SCRs MAIN
UCC2806DWTR ,Low Power, Dual Output, Current Mode PWM Controller
UCC2806M ,Low Power, Dual Output, Current Mode PWM ControllerUCC1806UCC2806UCC3806SLUS272F -- FEBRUARY 2000 -- REVISED AUGUST 2006Thesedeviceshavelimitedbuilt-i ..
UCC2806N ,Low Power, Dual Output, Current Mode PWM Controller
UCC2806N ,Low Power, Dual Output, Current Mode PWM Controller
UCC2806PWTR ,Low Power, Dual Output, Current Mode PWM Controller
UCC2806PWTR ,Low Power, Dual Output, Current Mode PWM Controller
TYN685-TYN688-TYN690
SCR
TYN 682 ---> TYN 692SCR
Symbol Parameter Value UnitIT(RMS) RMS on-state current
(180° conduction angle)= 105 °C20 A
IT(AV) Average on-state current
(180° conduction angle, single phase circuit)= 105 °C13 A
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)= 8.3ms 260 A=10 ms 250
I2tI2t value tp=10 ms 310 A2s
dI/dt Critical rateof riseof on-state current
Gate supply:IG= 100 mA diG/dt=1 A/μs
100 A/μs
Tstg
Storage and operating junction temperature range - 40to+ 150 40to+ 125 Maximum lead temperaturefor soldering during10sat 4.5 mm
from case
260 °C
TO220AB(Plastic)
AG HIGH SURGE CAPABILITY. HIGH ON-STATE CURRENT. HIGH STABILITY AND RELIABILITY
DESCRIPTION
Symbol Parameter TYN Unit
682 683 685 688 690 692VDRM
VRRM
Repetitive peak off-state voltage= 125°C 100 200 400 600 800 V
ABSOLUTE RATINGS (limiting values)
FEATURESThe TYN 682 ---> TYN 692 Family Silicon Control-
led Rectifiers are high performance glass passi-
vated chips technology.
This general purpose Family Silicon Controlled
Rectifiers is designed for power supply up to
400Hzon resistiveor inductive load.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value UnitRth (j-a) Junctionto ambient 60 °C/W
Rth (j-c) DC Junctionto casefor DC 1.3 °C/W
Symbol Test Conditions Value UnitIGT VD=12V (DC) RL=33Ω Tj=25°C MAX 25 mA
VGT VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V
tgt VD=VDRM IG= 200mA
dIG/dt= 1.5A/μs
Tj=25°C TYP 2 μs IG= 1.2 IGT Tj=25°C TYP 70 mA IT= 100mA gate open Tj=25°C MAX 40 mA
VTM ITM= 50A tp= 380μs Tj=25°C MAX 1.4 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj= 125°C2
dV/dt Linear slopeupto VD=67%VDRM
gate open
Tj= 125°C MIN 500 V/μs VD=67%VDRM ITM= 50A VR= 25V
dITM/dt=30 A/μsdVD/dt= 50V/μs
Tj= 125°C TYP 70 μs (AV) =1W PGM= 10W(tp=20 μs) IFGM =4A(tp =20 μs) VRGM =5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TYN 682 ---> TYN 692
Fig.1: Maximum average power dissipation versus
average on-state current.
Fig.2: Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink+
contact.
Fig.5: Relative variationof gate trigger current versus
junction temperature.
Fig.6: Non repetitive surge peak on-state current
versus numberof cycles.
Fig.3: Average on-state current versus case
temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4: Relative variationof thermal impedance versus
pulse duration.
TYN 682 ---> TYN 692
PACKAGE MECHANICAL DATATO220AB Plastic
Cooling method:C
Marking: type number
Weight:2.3g
Recommended torque value:0.8 m.N.
Maximum torque value:1 m.N.
Fig.7: Non repetitive surge peak on-state currentfora
sinusoidal pulse with width:t≤ 10 ms, and
corresponding valueof I2t.
Fig.8: On-state characteristics (maximum values).
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034 JP
=N=
Information furnishedis believedtobe accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsability
forthe consequencesof useof such informationnorfor any infringementof patentsor other rightsof third parties which may
result fromits use. Nolicense isgranted byimplication orotherwise underany patentor patent rightsof SGS-THOMSON Microelectronics.
Specifications mentionedin this publication are subjectto change without notice. This publication supersedes and replacesall
information previously supplied.
SGS-THOMSON Microelectronics products arenot authorizedfor useas critical componentsinlife support devicesor systems
without express written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
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TYN 682 ---> TYN 692
This datasheet has been :
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