TXDV808 ,ALTERNISTORSTXDV 408 ---> 808ALTERNISTORS
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TXDV408-TXDV808
ALTERNISTORS
TXDV 408 ---> 808March 1995
ALTERNISTORS VERY HIGH COMMUTATION : > 28 A/ms
(400Hz). INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734). dV/dt : 500 V/μs min
DESCRIPTION
ABSOLUTE RATINGS (limiting values)
FEATURESThe TXDV 408 ---> 808 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
1/5
GATE CHARACTERISTICS (maximum values) * For either polarity of electrode A2 voltage with reference to electrode A1.
PG (AV) = 1W PGM = 10W (tp = 20 μs) IGM = 4A (tp = 20 μs) VGM = 16V (tp = 20 μs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXDV 408 ---> 8082/5
123 456 780P(W)
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
20 40 60 80 100 120 1400
Tcase(C)o
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
10203040 5060708090 100110120 1300
I(A)T(RMS)
Fig.3 : RMS on-state current versus case temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
TXDV 408 ---> 8083/5
Fig.7 : Non repetitive surge peak on-state current for asinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
Fig.9 : Safe operating area.
TXDV 408 ---> 8084/5
PACKAGE MECHANICAL DATA TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
© 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
TXDV 408 ---> 8085/5
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