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Home ›  TT91 > TXB0108DQSR-TXB0108PWR-TXB0108PWRG4-TXB0108RGYR-TXB0108RGYRG4-TXB0108ZXYR,8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-USON -40 to 85
TXB0108DQSR-TXB0108PWR-TXB0108PWRG4-TXB0108RGYR-TXB0108RGYRG4 Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
TXB0108DQSRTIN/a5210avai8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-USON -40 to 85
TXB0108PWRTIN/a1000avai8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-TSSOP -40 to 85
TXB0108PWRG4TIN/a4avai8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-TSSOP -40 to 85
TXB0108RGYRTIN/a2998avai8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-VQFN -40 to 85
TXB0108RGYRG4TIN/a9avai8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-VQFN -40 to 85
TXB0108ZXYRTIN/a2500avai8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-BGA MICROSTAR JUNIOR -40 to 85


TXB0108DQSR ,8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-USON -40 to 85Block Diagram for TXB010X1An IMPORTANT NOTICE at the end of this data sheet addresses availability, ..
TXB0108PWR ,8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-TSSOP -40 to 85Maximum Ratings . 58.4 Device Functional Modes.... 146.2 Handling Ratings. 59 Application and Imple ..
TXB0108PWRG4 ,8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-TSSOP -40 to 85Features... 16.17 Typical Characteristics...... 102 Applications..... 17 Parameter Measurement Info ..
TXB0108RGYR ,8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-VQFN -40 to 85 SCES643F–NOVEMBER 2006–REVISED NOVEMBER 20145 Pin Configuration and FunctionsDQS PACKAGE PW PACKAG ..
TXB0108RGYRG4 ,8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-VQFN -40 to 85Electrical Characteristics ...... 610 Power Supply Recommendations... 176.6 Timing Requirements: V ..
TXB0108ZXYR ,8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect 20-BGA MICROSTAR JUNIOR -40 to 85Features 3 DescriptionThis 8-bit noninverting translator uses two separate1• 1.2 V to 3.6 V on A Po ..
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TXB0108DQSR-TXB0108PWR-TXB0108PWRG4-TXB0108RGYR-TXB0108RGYRG4-TXB0108ZXYR
8-Bit Bidirectional Voltage-Level Translator with Auto Direction Sensing and +/-15-kV ESD Protect
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TXB0108

SCES643F –NOVEMBER 2006–REVISED NOVEMBER 2014
TXB0108 8-Bit Bidirectional Voltage-Level Translator with Auto-Direction Sensing and
±15-kV ESD Protection Features 3 Description

This 8-bit noninverting translator uses two separate 1.2Vto 3.6VonA Port and 1.65Vto 5.5Von configurable power-supply rails. The A port isB Port (VCCA≤ VCCB) designed to track VCCA. VCCA accepts any supply• VCC Isolation Feature–If Either VCC InputIsat voltage from 1.2Vto 3.6V. TheB portis designedtoGND, All Outputs Arein the High-Impedance track VCCB. VCCB accepts any supply voltage fromState 1.65Vto 5.5V. This allows for universal low-voltage
bidirectional translation between any of the 1.2-V,• OE Input Circuit Referencedto VCCA
1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.• Low Power Consumption, 4-μA Max ICC VCCA should not exceed VCCB.• Ioff Supports Partial-Power-Down Mode Operation When the output-enable (OE) inputis low,all outputs• Latch-Up Performance Exceeds 100 mA Per are placedin the high-impedance state.JESD 78, ClassII
The TXB0108is designedso that the OE input circuit• ESD Protection Exceeds JESD22 is suppliedby VCCA.– A Port
This deviceis fully specified for partial-power-down– 2000-V Human-Body Model (A114-B) applications using Ioff. The Ioff circuitry disables the– 1000-V Charged-Device Model (C101) outputs, preventing damaging current backflow
through the device whenitis powered down.– B Port ±15-kV Human-Body Model (A114-B) To ensure the high-impedance state during power-up power-down, OE should be tiedto GND througha– ±8-kV Human-Body Model (A114-B)
pulldown resistor; the minimum valueof the resistoris(YZP Package Only) determined by the current-sourcing capabilityof the– 1000-V Charged-Device Model (C101) driver. Applications Device Information(1) Handset• Smartphone• Tablet• Desktop PC
(1) Forall available packages, see the orderable addendumat
the endofthe datasheet.
Typical Application Block Diagram for TXB010X
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