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TTC007
Power transistor for high-speed switching applications
TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type
TTC007 High-Speed Switching Applications
DC-DC Converter Applications High DC current gain: hFE = 400 to1000 (IC = 0.1 A)
• Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) High-speed switching : tf = 85 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note1: Mounted on FR4 board (glass epoxy; 645 mm2 ,1.6 mm thick; Cu area: 645 mm2)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.01 g (typ.)
