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UC382T-2 ,1maximum ratings over operating free-air temperature (unless otherwise noted)VB . . . . . . . . . . ..
TTB002
Power transistor for low frequency applications
TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)
TTB002 Audio Frequency Power Amplifier Application Low collector saturation voltage : VCE (sat) = −0.5 V (max) High power dissipation : PC = 30 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C) Note 1: Ensure that the junction temperature does not exceed 175°C
during use of the device.
Note 2: The definitions of the absolute maximum junction and storage temperatures are based on AEC-Q101.
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight : 0.36 g (typ.)
