TSI265B1RL Fast Delivery |IC PHOENIX CO.,LIMITED

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TSI265B1RL
TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
TSIxxB1
Telecom equipment requiring combined
protection against transient overvoltages and
rectification by diode bridge :
Telephone set
Base station for cordless set
Fax machine
Modem
Caller Id equipment
Set top box
MAIN APPLICATION
The TSIxxB1 provides the diode bridge and the
crowbar protection function that can be found in
most of telecom terminal equipment.
Integrated monolithically within a SO8 package,
this ASD device allows space saving on the
board and greater reliability.
DESCRIPTION
CCITT K17 - K20 10/700 μs 1.5 kV
5/310 μs 38A
VDE 0433 10/700 μs2 kV
5/310 μs 40A(*)
CNET 0.5/700 μs 1.5 kV
0.2/310 μs 38A
Bellcore
TR-NWT-000974: 10/1000 μs1 kV
10/1000μs 30A(*)
FCC Part 68 2/10 μs 2.5 kV
2/10 μs 75A (*)
MIL STD883C Method 3015-6
(*) with series resistor or PTC.
IN ACCORDANCE WITH THE FOLLOWING
STANDARDS :
TERMINAL SET INTERFACE
PROTECTION AND DIODE BRIDGE
January 1998 - Ed: 3
Diode bridge for polarity guard and crowbar
protection within one device.
Single chip for greater reliability
Reduces component count versus discrete
solution
Saves space on the board
BENEFITS
STAND-OFF VOLTAGE FROM 62V TO 265V
PEAK PULSE CURRENT : 30 A (10/1000 μs)
MAXIMUM DC CURRENT : IF = 0.2 A
HOLDING CURRENT :150 mA
FEATURES
Application Specific Discretes
A.S.D.
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
1/9
TYPICAL APPLICATION
Telecom terminals have a diode bridge for polarity
guard, located at the line interface stage. They also
have above this diode bridge one crowbar
protection device that is mandatory to prevent
atmospheric effects and AC mains disturbances
from damaging the electronic circuitry that follows
the diode bridge.
SGS-THOMSON proposes a one chip device that
includes both protection and diode bridge. This is
the concept of the TSIxxB1 devices.
Fig. 1 : The various uses of the TSIxxB1 in a conventional telecom network
TSIxxB1
2/9
The VRM value corresponds to the maximum
voltage of the application in normal operation. For
instance, if the maximum line voltage is ranging
between ±100VRMS of ringing plus 48V of battery
voltage, then the protection chosen for this applica-
tion shall have a VRM close to 200V.
The VBO is the triggering voltage. This indicates the
voltage limit for which the component
short-circuits. Passing this VBO makes the device
turn on.
The IBO is the current that makes the device turn
on. Indeed, if we want a Trisil to be turned on not
only the voltage across it shall pass the VBO value
but the current through it shall also pass the IBO
value.
In other words, if a voltage surge occurring on the
line is higher than the VBO value of a Trisil, whereas
the line surge current is limited to a value that does
not exceed the Trisil’s IBO value, then the Trisil will
never turn into short circuit. At this time the surge
will be clamped by the Trisil.
Anyhow the electronic circuitry located after the
Trisil will always be protected whatever the Trisil
state is (crowbar or clamping mode).
The IH stands for the holding current. When the
Trisil is turned on, as soon as the crossing current
surge gets lower than this IH value, the Trisil
protection device turns back in its idle state.
Remark : for this reason the Trisil ’s IH value shall
be chosen higher than what the maximum telecom
line current can be.
TSIxxB1 BEHAVIOUR WITH REGARD TO
SURGE STANDARD :
The TSIxxB1 is able to replace both diode bridge
and usual discrete protection on telecom
terminals. Furthermore it complies with the CCITT
K17 recommendations :
10/700 μs waveform surge test, ± 1.5kV
AC power induction test
AC power contact test
ELECTRICAL PARAMETERS
Fig. 2 : Test circuit for the CCITT K17 recommendations
TSIxxB1
3/9
This test concerns the 10/700 μs waveform surge,± 1.5 kV.
The surge generator used for the test has the
following circuitry (fig.2).
TEST # 1
LIGHTNING SIMULATION
Fig. 2 : 10/700 μs waveform surge generator circuit
The behaviour of the TSI200B1 to this lightning surge is given below (fig. 3).
Fig. 3 : Voltage across the TSI200B1 at the + and - terminations and current throught it
for a 1.5 kV positive surge (fig.3a) and negative surge (fig. 3b)
These curves show the peak voltage the surge
generates across the TSI200B1 + and -
terminations. This lasts a short time (≈ 2 μs) and
after, as the internal protection gehaves like a short
circuit. The voltage drop across the TSIxxB1
becomes a few volts. In the meanwhile all the
surge current flows in the protection.
As far as the 10/700 μs waveform surge test is
concerned,the TSIxxB1 withstand the ± 1.5 kV
test.
TSIxxB1
4/9
This test simulates the induction phenomena that
can happen between telecom lines and AC mains
lines (fig. 4).
TEST # 2
AC POWER INDUCTION TEST
Fig. 4 : AC power induction test circuit
Part #1
test conditions : VRMS = 240 V
R = 600 Ω
t = 0.2 s
Part #2
test conditions : VRMS = 600 V
R = 600 Ω
t = 0.2 s
Fig. 5 : Voltage at the + and - terminations of the
TSI200B1, and current through it
while test part 1 is applied.
The TSIxxB1 withstand the AC power induction
test in both cases.
This test simulates the direct contact between the
telecom lines and the AC mains lines.
The AC power contact test consists in applying
240VRMS through a 10Ω PTC during 15 minutes
long on the device under test. The CCITT K17
recommendation specifies an internal generator
impedance allowing 10 ARMS when in short circuit.
The behavior of the TSI200B1 with respect to this
surge is given in figure 6.
TEST #3
AC POWER CONTACT TEST
Fig. 6 : Voltage at the TSI200B1 + & - terminations
and the current through it.
The figure 6 shows that after 250ms there is no
current anymore flowing through the TSI200B1
device. This is due to the action of the serial PTC
that limits the current through the line. This PTC is
mandatory for this test. It can also be replaced by a
fuse or any other serial protection that "opens" the
line loop under AC contact test.
TSIxxB1
5/9
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Note 1 : Pulse waveform :
10/1000μstr =10μstp =1000μs
5/310μstr=5μstp=310μs
2/10μstr =2μstp =10μs 100PP tr p t
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
TSIxxB1
6/9

Partno	Mfg	Dc	Qty	Available	Descript
TSI265B1RL	ST	N/a	500	avai	TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE