TSI220B1 Fast Delivery |IC PHOENIX CO.,LIMITED

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TSI220B1
TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
1/9
TSIxxB1
Telecom equipment requiring combined
protection against transient overvoltages and
rectificationby diode bridge: Telephone set Base station for cordless set Fax machine Modem CallerId equipment Set top box
MAIN APPLICATION
The TSIxxB1 provides the diode bridge and the
crowbar protection function that can be foundin
mostof telecom terminal equipment.
Integrated monolithically withina SO8 package,
this ASD device allows space savingon the board
and greater reliability.
DESCRIPTION
CCITT K17- K20 10/700 μs 1.5kV
5/310 μs 38A
VDE 0433 10/700 μs2kV
5/310 μs 40A(*)
CNET 0.5/700 μs 1.5kV
0.2/310 μs 38A
Bellcore
TR-NWT-000974: 10/1000 μs1kV
10/1000μs 30A(*)
FCC Part68 2/10 μs 2.5kV
2/10 μs 75A(*)
MIL STD883C Method 3015-6
(*) with series resistoror PTC. ACCORDANCE WITH THE FOLLOWING
STANDARDS:
TERMINAL SET INTERFACE
PROTECTION AND DIODE BRIDGE
August 2001- Ed:3 Diode bridgefor polarity guard and crowbar
protection within one device. Single chipfor greater reliability Reduces component count versus discrete
solution Saves space on the board
BENEFITS STAND-OFF VOLTAGE FROM 62V TO 265V PEAK PULSE CURRENT:30A (10/1000 μs) MAXIMUM DC CURRENT:IF= 0.2A HOLDING CURRENT :150 mA
FEATURES
Application Specific Discretes
A.S.D.™
TM: ASDis trademarksof SGS-THOMSON Microelectronics.
TSIxxB1
2/9
TYPICAL APPLICATION
Telecom terminals havea diode bridge for polarity
guard, locatedat the line interface stage. They
also have above this diode bridge one crowbar
protection device thatis mandatoryto prevent
atmospheric effects and AC mains disturbances
from damaging the electronic circuitry that follows
the diode bridge.
SGS-THOMSON proposesa one chip device that
includes both protection and diode bridge. Thisis
the conceptof the TSIxxB1 devices.
Fig.1: The various usesof the TSIxxB1ina conventional telecom network
TSIxxB1
3/9
The VRM value corresponds to the maximum
voltageof the applicationin normal operation. For
instance,if the maximum line voltageis ranging
between 100VRMSof ringing plus 48Vof battery
voltage, then the protection chosenfor this applica-
tion shall havea VRM closeto 200V.
The VBOis the triggering voltage. This indicates
the voltage limit for which the component
short-circuits. Passing this VBO makes the device
turn on.
The IBOis the current that makes the device turn
on. Indeed,if we wanta Trisiltobe turnedon not
only the voltage acrossit shall pass the VBO value
but the current throughit shall also pass the IBO
value. other words,ifa voltage surge occurringon the
lineis higher than the VBO valueofa Trisil,
whereas the line surge currentis limitedtoa value
that does not exceed the Trisil’s IBO value, then the
Trisil will never turn into short circuit.At this time
the surge willbe clampedby the Trisil.
Anyhow the electronic circuitry located after the
Trisil will alwaysbe protected whatever the Trisil
stateis (crowbaror clamping mode).
TheIH stands for the holding current. When the
Trisilis turned on,as soonas the crossing current
surge gets lower than thisIH value, the Trisil
protection device turns backinits idle state.: for this reason the Trisil‘sIH value shall chosen higher than what the maximum telecom
line current can be.
TSIxxB1 BEHAVIOUR WITH REGARD TO
SURGE STANDARD:
The TSIxxB1is ableto replace both diode bridge
and usual discrete protection on telecom
terminals. Furthermoreit complies with the CCITT
K17 recommendations:
10/700μs waveform surge test, 1.5kV power induction test power contact test
ELECTRICAL PARAMETERS
Fig.2: Test circuitfor the CCITT K17 recommendations
TSIxxB1
4/9
This test concerns the 10/700μs waveform surge,± 1.5 kV.
The surge generator used for the test has the
following circuitry (fig.2).
TEST#1
LIGHTNING SIMULATION
Fig.2: 10/700μs waveform surge generator circuit
The behaviourof the TSI200B1to this lightning surgeis given below (fig.3).
Fig.3: Voltage across the TSI200B1at the+ and- terminations and current throughtit
fora 1.5kV positive surge (fig.3a) and negative surge (fig. 3b)
These curves show the peak voltage the surge
generates across the TSI200B1 + and-
terminations. This lastsa short time(′2 μs) and
after, as the internal protection gehaves likea
short circuit. The voltage drop across the TSIxxB1
becomesa few volts.In the meanwhile all the
surge current flowsin the protection. far as the 10/700 μs waveform surge testis
concerned,the TSIxxB1 withstand the ±1.5kV test.
TSIxxB1
5/9
This test simulates the induction phenomena that
can happen between telecom lines and AC mains
lines (fig. 4).
TEST#2 POWER INDUCTION TEST
Fig.4: AC power induction test circuit
Part#1
test conditions: VRMS= 240V= 600Ω= 0.2s
Part#2
test conditions: VRMS= 600V= 600Ω= 0.2s
Fig.5: Voltageat the+ and- terminationsof the
TSI200B1, and current throughit
while test part1is applied.
The TSIxxB1 withstand the AC power induction
testin both cases.
This test simulates the direct contact between the
telecom lines and the AC mains lines.
The AC power contact test consistsin applying
240VRMS througha 10Ω PTC during 15 minutes
long on the device under test. The CCITT K17
recommendation specifies an internal generator
impedance allowing10 ARMS whenin short circuit.
The behaviorof the TSI200B1 with respectto this
surgeis givenin figure6.
TEST#3 POWER CONTACT TEST
Fig.6: Voltageat the TSI200B1+&- terminations
and the current throughit.
The figure6 shows that after 250ms thereis no
current anymore flowing through the TSI200B1
device. Thisis dueto the actionof the serial PTC
that limits the current through the line. This PTCisfor this test.It can alsobe replacedbya
fuseor any other serial protection that “opens” the
line loop under AC contact test.
TSIxxB1
6/9
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
Note1: Pulse waveform:
10/1000μstr =10μstp =1000μs
5/310μstr =5μstp =310μs
2/10μstr =2μstp =10μs 100 tr p t
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Partno	Mfg	Dc	Qty	Available	Descript
TSI220B1	ST ?	N/a	35880	avai	TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE