TSD4M150V ,V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuitsABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vros Drain-Source Voltage (Ves = 0) 100 V
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TSD882SCT , Low Vce(sat) NPN Transistor
TSDF1220 ,12 GHz Silicon NPN Planar RF Transistor Document Number 850662 (6) Rev. 6, 30-Jun-00TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RWVishay Semicond ..
TSDF1220W ,12 GHz Silicon NPN Planar RF Transistorapplications
TSD4M150V
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE
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TSD4M150V
N - CHANNEL ENHANCEMENT MODE
ISOFET POWER MOS TRANSISTOR MODULE
TYPE Voss Ros(on) ID
TSD4M150F/V
100V 0.0149 135A
HIGH CURRENT POWER MOS MODULE
VERY LOW Rm JUNCTION TO CASE
DUAL SOURCE CONTACTS
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
ISOLATED CASE (2500V RMS)
. EASY TO MOUNT
'' VERY LOW
INTERNAL PARASITIC
INDUCTANCE (TYPICALLY < 5 ns)
AVALANCHE RUGGEDNESS TECHNOLOGY
(SEE IRFP150 FOR RATING)
INDUSTRIAL APPLICATIONS:
DC/DC & DC/AC CONVERTERS
SMPS & UPS
MOTOR CONTROL
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
TSD4M150V
TSD4M150F
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vos Drain-Source Voltage (Ves = 0) 100 V
Voen Drain-Gate Voltage (Res = 20 kn) 100 V
Vas Gate-Source Voltage i 20 V
lo Drain Current (continuous) at To = 25 ''C 135 A
lo Drain Current (continuous) at To = 100 ot 85 A
IDM(-) Drain Current (pulsed) 500 A
Ptot Total Dissipation at To = 25 y 500 W
Derating Factor 4 WPC
Tstg Storage Temperature -55 to 150 't
Ti Max. Operating Junction Temperature 150 oty
Vlso Insulation Withstand Voltage (AC-RMS) 2500 V
(0) Pulse width limited by safe operating area
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THERMAL DATA ' T-39 16
Rthj-case Thermal Resistance Junction-Case Max 0.25 0CIW
thc-h Thermal Resistance Case-Heatsink With Conductive
Grease Applied Max! 0.05 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 oc unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(anwss Drain-Source ID = 1 mA Vas = 0 100 V
Breakdown Voltage
loss Zero Gate Voltage Vos = Max Rating 400 11A
Drain Current (Vas = 0) VDs = Max Rating x 0.8 Tc = 125 t'ty 2 mA
less Gate-Body Leakage Vas = d: 20 V k 400 nA
Current (Vos = 0)
ON (ss)
_Symbol Parameter Test Conditions Min. Typ. Max. Unit
Vegan) Gate Threshold Voltage VDs = Vas ID = 1 mA 2 4 V
RDS(0n) Static Drain-Source Vas = 10V ID = 70 A 0.014 Q
On Resistance
DYNAMIC
Symbol Parameter Test Conditions I Min. Typ. Max. Unlt
gis Forward Vos = 25 V ID = 70 A 20 mho
Transconductance
Clss Input Capacitance Vns = 25 V f.--. 1 MHz Vas = 0 11200 pF
Coss Output Capacitance 4200 pF
Crss Reverse Transfer 1700 pF
l Capacitance
SWITCHING (INDUCTIVE LOAD)
Symbol Parameter Test Conditions Min. Typ. Max. Unit '
tam) Turn-on Time Von = 50 V lo = 50 A 100 ns
(di/dt)on Turn-on Current Slope Ras = 50 n Vas = 10 V 250 Alps
mom Turn-off Delay Time L = 100 “H 1100 ns
it Fail Time 130 ns
SOURCE DRAIN DIODE
- _Symbol Parameter Test Conditions Min. Typ. Max. Unit
lso Source-Drain Current 135 A
Isomc) Source-Drain Current 500 A
(pulsed)
I Vso Forward On Voltage lso = 135 A was = 0 2 V
trr Reverse Recovery Iso = 135 A .dildt = 100 Alps 400 ns
(:8) Pulsed: Pulse duration = 300 ps. duty cycle 1.5 %
(s) Pulse width limited by safe operating area
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