TSAL7200 ,GaAs/GaAlAs IR Emitting Diode in 鈭?5 mm (T-1戮) Package Document Number 810124 (5) Rev. 1, 20-May-99– Relative Radiant Powere relI – Relative Radia ..
TSB12LV01A ,High-Speed Serial-Bus Link-Layer Controller
TSB12LV01B ,High Performance 1394 3.3V Link Layer for Telecom, Embedded & Industrial App.,32-Bit I/F, 2kb FIFOFEATURES • Physical-Link Interface• Link Core – Compatible With Texas InstrumentsPhysical Layer Dev ..
TSB12LV01BIPZTEP ,High Performance 1394 3.3V Link Layer for Telecom, Embedded & Industrial App.,32-Bit I/F, 2kb FIFOBlock Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
TSB12LV01BPZT ,High Performance 1394 3.3V Link Layer for Telecom, Embedded & Industrial App.,32-Bit I/F, 2kb FIFOSLLA212–JUNE 2006However, there are three restrictions that were not present in the TSB12LV01A devi ..
TSB12LV01BPZTG4 ,High Performance 1394 3.3V Link Layer for Telecom, Embedded & Industrial App.,32-Bit I/F, 2kb FIFO 100-TQFP 0 to 70 27-Aug-2009PACKAGING INFORMATION(1) (2) (3)Orderable Device Status Package Package Pins Package Ec ..
UBA2014T ,600 V driver IC for HF fluorescent lamps
UBA2014T/N1 ,UBA2014; 600 V driver IC for HF fluorescent lamps
UBA2014T/N1 ,UBA2014; 600 V driver IC for HF fluorescent lamps
UBA2021P ,630 V driver IC for CFL and TL lampsINTEGRATED CIRCUITSDATA SHEETUBA2021630 V driver IC for CFL and TLlampsProduct specification 2001 Ja ..
UBA2021P ,630 V driver IC for CFL and TL lampsGENERAL DESCRIPTION• Adjustable preheat and ignition time The UBA2021 is a high-voltage IC intended ..
UBA2021P ,630 V driver IC for CFL and TL lampsFeaturesn Adjustable preheat and ignition time.n Adjustable preheat current.n Adjustable lamp power ..
TSAL7200
GaAs/GaAlAs IR Emitting Diode in 鈭?5 mm (T-1戮) Package
TSAL7200
Vishay Semiconductorswww.vishay.comDocument Number 81012
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 )
Package
DescriptionTSAL7200 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in a clear plas-
tic package.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features Extra high radiant power and radiant intensity High reliability Low forward voltage Suitable for high pulse current operation Standard T–1 (ø 5 mm) package Angle of half intensity ϕ = ± 17 Peak wavelength p = 940 nm Good spectral matching to Si photodetectors
94 8389
ApplicationsInfrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum RatingsTamb = 25C
