TS12 Fast Delivery |IC PHOENIX CO.,LIMITED

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TS12
SENSITIVE & STANDARD(12A SCRs)
1/10 TN12, TS12 and TYNx12 Series
SENSITIVE& STANDARD 12A SCRs
September 2000-Ed:3
MAIN FEATURES:
DESCRIPTION
Available eitherin sensitive (TS12)or standard
(TYN, TN12...) gate triggering levels,the 12A SCR
seriesis suitabletofitall modesof control foundin
applications such as overvoltage crowbar
protection, motor control circuitsin power tools
and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
Available in though-hole or surface-mount
packages, they providean optimized performancea limited space area.
Symbol Value Unit T(RMS) 12 A
VDRM/VRRM 600to 1000 V
IGT 0.2to15 mA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit T(RMS) RMS on-state current (180° conduction angle) Tc= 105°C12 A(AV) Averageon-state current (180° conduction angle) Tc= 105°C8 A
DPAK/
IPAK PAK/
TO-220AB
ITSM Non repetitive surge peak
on-state current=8.3ms Tj= 25°C 115 146tp=10ms 110 140 tI t Valuefor fusing tp=10ms Tj= 25°C60 98 A S
dI/dt Criticalrateofriseof on-state
currentIG=2xIGT,tr≤100ns F=60Hz Tj= 125°C50 A/μs
IGM Peak gate current tp=20μs Tj= 125°C4 A G(AV) Averagegate power dissipation Tj= 125°C1 Wstg
Storage junction temperature range
Operating junction temperature range40to+15040to+125 °CRGM Maximum peak reverse gate voltage(for TN12& TYN) 5 VK
DPAK
(TS12-B)
(TN12-B)KK2PAK
(TN12-G)
IPAK
(TS12-H)
(TN12-H)
TO-220AB
(TYN)
TN12, TS12 and TYNx12 Series
2/10
ELECTRICAL CHARACTERISTICS(Tj= 25°C, unless otherwise specified) SENSITIVE STANDARD
THERMAL RESISTANCES= Copper surface undertab
Symbol Test Conditions TS1220 UnitGT =12V RL=140Ω
MAX. 200 μA
VGT MAX. 0.8 VGD VD =VDRM RL=3.3kΩ RGK=1kΩ Tj= 125°C MIN. 0.1 VRG IRG =10μA MIN. 8VH IT =50mA RGK=1kΩ MAX. 5 mAL IG=1mA RGK=1kΩ MAX. 6 mA
dV/dt VD =67% VDRM RGK=220Ω Tj= 125°C MIN. 5 V/μs
VTM ITM=24Atp=380μs Tj= 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj= 125°C MAX. 0.85 V Dynamic resistance Tj= 125°CMAX. 30 mΩ
IDRM
IRRM
VDRM =VRRM RGK=220Ω= 25°CMAX. 5 μA= 125°C2 mA
Symbol Test Conditions
TN1215 TYN
Unit
B/H G x12T x12
IGT =12V RL =33Ω
MIN. 2 0.5 2 mA
MAX. 15 5 15
VGT MAX. 1.3 VGD VD =VDRM RL=3.3kΩ Tj= 125°C MIN. 0.2 VH IT=500mA Gate open MAX. 40 301530 mA IG=1.2IGT MAX. 80 60 30 60 mA
dV/dt VD =67% VDRM Gate open Tj= 125°C MIN. 200 40 200 V/μsTM ITM=24Atp=380μs Tj= 25°C MAX. 1.6 Vt0 Threshold voltage Tj= 125°C MAX. 0.85 V Dynamic resistance Tj= 125°C MAX. 30 mΩDRMRRMDRM=VRRM= 25°C MAX. 5 μA= 125°C2 mA
Symbol Parameter Value Unit th(j-c) Junctionto case (DC) 1.3 °C/W
Rth(j-a) Junctionto ambient TO-220AB 60 °C/W
IPAK 1001cm D PAK 45=0.5cm DPAK 70
TN12, TS12 and TYNx12 Series
3/10
PRODUCT SELECTOR
ORDERING INFORMATION
Part Number
Voltage (xxx)
Sensitivity Package
600V 700V 800V 1000V
TN1215-xxxB X X 15mA DPAK
TN1215-xxxG X X X 15mA D PAK
TN1215-xxxH X X 15mA IPAK
TS1220-xxxB X X 0.2mA DPAK
TS1220-xxxH X X 0.2mA IPAK
TYNx12 X X X 30mA TO-220AB
TYNx12T X X X 15mA TO-220AB 12 15 - 600 B (-TR)
STANDARD
SCR
SERIES
CURRENT:12A
SENSITIVITY:
15: 15mA
VOLTAGE:
600: 600V
800: 800V
1000:1000V
PACKAGE: DPAK IPAKD PAK
PACKING MODE:
Blank:Tube
-TR:D PAK& DPAK
Tape& Reel 12 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
CURRENT:12A
SENSITIVITY:
20: 200μA
VOLTAGE:
600: 600V
700: 700V
PACKAGE: DPAK IPAK
PACKING MODE:
Blank:Tube
-TR: DPAKTape& Reel
TYN 6 12 T
STANDARD
SCR
SERIES
CURRENT:12A
SENSITIVITY:
Blank: 30mA
T:15mAVOLTAGE:
600: 600V
800: 800V
1000: 1000V
TN12, TS12 and TYNx12 Series
4/10
OTHER INFORMATION
Note:x= voltage
Part Number Marking Weight Base Quantity Packing mode
TN1215-x00B TS1215x00 0.3g 75 Tube
TN1215-x00B-TR TS1215x00 0.3g 2500 Tape&reel
TN1215-x00G TS1215x00G 1.5g 50 Tube
TN1215-x00G-TR TS1215x00G 1.5g 1000 Tape&reel
TN1215-x00H TN1215x00 0.4g 75 Tube
TS1220-x00B TS1220x00 0.3g 75 Tube
TS1220-x00B-TR TS1220x00 0.3g 2500 Tape&reel
TS1220-x00H TS1220x00 0.4g 75 Tube
TYNx12 TYNx12 2.3g 250 Bulk
TYNx12RG TYNx12 2.3g 50 Tube
TYNx12T TYNx12T 2.3g 250 Bulk
TYNx12TRG TYNx12T 2.3g 50 Tube
Fig.1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus case temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mountedon
FR4 with recommended pad layout) (DPAK and2 PAK).
Fig. 3-1: Relative variationof thermal impedance
junctionto case versus pulse duration. 123 456 7890
P(W)=180°
IT(av)(A)
360° 25 50 75 100 1250
IT(av)(A)=180°
Tcase(°C) 25 50 75 100 1250.0
IT(av)(A)180°
D2PAK
DPAK
Tamb(°C)
1E-3 1E-2 1E-1 1E+00.1
1.0= [Zth(j-c)/Rth(j-c)]
tp(s)
TN12, TS12 and TYNx12 Series
5/10
Fig. 3-2: Relative variation of thermal
impedance junctionto ambient versus pulse
duration (recommended pad layout, FR4 PC
board).
Fig. 4-1: Relative variationof gate trigger
current, holding current and latching versus
junction temperaturefor TS12 series.
Fig. 4-2: Relative variationof gate trigger
current, holding current and latching current
versus junction temperaturefor TN12& TYN
series.
Fig.5: Relative variationof holding current
versus gate-cathode resistance (typical values)
for TS12 series.
Fig.6: Relative variationof dV/dt immunity
versus gate-cathode resistance (typical values)
for TS12 series.
Fig.7: Relative variationof dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS12 series.
1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01
1.00= [Zth(j-a)/Rth(j-a)]
DPAK
TO-220AB2PAK
tp(s)
-40 -200 20 40 60 80 100 120 1400.0
IGT,IH,IL[Tj]/ IGT,IH,IL[Tj= 25°C]
IGT
IH&IL
Rgk =1kΩ
Tj(°C)
-40 -200 20 40 60 80 100 120 1400.0
IGT,IH,IL[Tj]/ IGT,IH,IL[Tj= 25°C]
IGT&IL
Tj(°C)
1E-2 1E-1 1E+0 1E+10.0
IH[Rgk]/ IH[Rgk= 1kΩ]=25°C
Rgk(kΩ)
dV/dt[Rgk]/ dV/dt [Rgk=220]Ω
Rgk(k)Ω
Tj=125°C
VD=0.67xVDRM
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 1500.0
4.0=0.67 xVDRM
Tj=125°C
Rgk =220Ω
dV/dt[Cgk]/ dV/dt [Rgk=220]Ω
Cgk(nF)
TN12, TS12 and TYNx12 Series
6/10
Fig.8: Surge peak on-state current versus
numberof cycles (TS12/TN12/TYN).
Fig.9: Non-repetitive surge peak on-state
current fora sinusoidal pulse with width<10 ms, and corresponding valuesofI t.
Fig. 10: On-state characteristics (maximum
values).
Fig.11: Thermal resistance junctionto ambient
versus copper surface undertab (Epoxy printed
circuit board FR4, copper thickness:35 μm). =125°C
VD= 0.67xVDRM
dV/dt[Rgk]/ dV/dt [Rgk=220]Ω10.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Rgk(k)Ω
0.01 0.10 1.00 10.0010
ITSM(A),I2t(A2s)
Tjinitial=25°C
ITSM2t
dI/dt
limitattion
TYN/TN12
TS12
TS12
TYN/TN12
tp(ms)
0.0 0.5 1.01.5 2.0 2.5 3.0 3.5 4.0 4.55.01
ITM(A)max.:
Vto=0.85V=30mΩ =Tjmax.
Tj=25°C
VTM(V)2 468 10 121416 18200
Rth(j-a)(°C/W)
DPAK2PAK
S(cm2)

Partno	Mfg	Dc	Qty	Available	Descript
TS12	ADS	N/a	3300	avai	SENSITIVE & STANDARD(12A SCRs)