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TRF6900APTTIN/a34150avaiSingle-Chip RF Transceiver
TRF6900APTRTIN/a990avaiSingle-Chip RF Transceiver


TRF6900APT ,Single-Chip RF TransceiverBlock Diagram for Interfacing to the MSP430 Microcontroller3POST OFFICE BOX 655303 • DALLAS, TEXAS ..
TRF6900APTR ,Single-Chip RF Transceiver     SLAS258E − SEPTEMBER 2000 − REVISED AUGUST 2005 Single-Chip RF Transc ..
TRF6901 ,Single-Chip RF TransceiverBlock Diagram for Interfacing to the MSP430 Microcontroller3POST OFFICE BOX 655303 • DALLAS, TEXAS ..
TRF6901PT ,Single-Chip RF Transceiver     SLWS110G − SEPTEMBER 2001 − REVISED JUNE 2004 Single-Chip RF Transceiv ..
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U10DCT , Dual Common-Cathode Ultrafast Rectifier
U10DCT , Dual Common-Cathode Ultrafast Rectifier
U10FWJ2C48M ,SCHOTTKY BARRIER RECTIFIER STACK LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING MODE POWER SUPPLY, CONVERTER & CHOPPER APPLICATION10FWJ2C48M,U10FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10FWJ2C48M,U ..
U10GWJ2C48C ,SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY, CONVERTER & CHOPPER APPLICATION10GWJ2C48C,U10GWJ2C48C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10GWJ2C48C,U1 ..
U10GWJ2C48C ,SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY, CONVERTER & CHOPPER APPLICATION10GWJ2C48C,U10GWJ2C48C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10GWJ2C48C,U1 ..
U143M , 7-Segment Decoder Driver


TRF6900APT-TRF6900APTR
Single-Chip RF Transceiver
24-Bit Direct Digital Synthesizer (DDS) With11-Bit DAC On-Chip VCO and PLL On-Chip Reference Oscillator Minimal External Components Required Low Power Consumption Typical Output Power of 4.5 dBm
Modes
2.2-V to 3.6-V Operation Fast Radio Strength Signal Indicator (RSSI) Flexible Serial Interface to TI MSP430
Microcontroller
48-Pin Low-Profile Plastic Quad Flat
Package (PQFP)


IF1_OUTIF_GNDIF2_INDEM_GND4645444348 42
LNA_VCCLNA_OUTMIX_INMIX_VCCMIX_OUT
GND
XOSC1XOSC2
DDS_GND
MODE
DDS_VCC
TX_DA
DIG_VCC
DIG_GND393841
VREFMIX_GNDIF1_IN
VCO_T
ANK2
VCO_T
ANK1
STDBY
PQFP PACKAGE
(TOP VIEW)

LNA_GND
LNA_IN
LNA_GND
PA_VCC
PA_OUT
PA_GND
PLL_GND
PD_SET
PD_OUT2
PD_OUT1
LOCKDET
PLL_VCC
DEM_VCC
DEM_TANK
DEM_TANK
RSSI_OUT
AMP_IN
AMP_CAP
AMP_OUT
S&H_CAP
DATA_OUT
DATA
CLOCK
STROBE
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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