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TPS618
PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
TOSHIBA TPS618
TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
TPS61l8
PHOTO TRANSISTOR FOR PHOTO INTERRUPTER Unit in mm
PHOTOELECTRIC COUNTER (4)
POSITION AND ROTATIONAL SPEED SENSOR (E?
AUTOMATIC CONTROL UNIT +0 CM.
4.4-0.2 fl
0 Fast response speed 24:03 A
0 The same external shape as the infrared LED TLN107A, and is g. t (1%
best suited for combination with TLN107A as a photo :2 ,r'
interrupter. - ii at
0 Visible light cut type(blaek package) 7 I
"g l -'. 2-CI0.4-e0n '
MAXIMUM RATINGS (Ta = 25°C) 1 l
(2.54)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCEO 30 V ( ) : REFERENCE VALUE
Emitter-Collector Voltage VECO 5 V JEDEC -
Collector Current 10 50 mA EIAJ -
Collector Power Dissipation PC 75 mW TOSHIB A 0-4B1
Collector Power ?issipation APC/OC -1 mW/°C Weight I 0.16g (TYP.)
Derating(Ta>25 C)
. PIN CONNECTION
Operating Temperature Range Topr -25--85 T
Storage Temperature Range Tstg -40--100 T 2 1. EMITTER
1 2. COLLECTOR
OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dark Current ID (ICEO) VCE=24V, E=0 - 0.005 0.1 PA
. VCE=3V, E=0.1mW/cm2
Light Current (Note 1) IL (Note 2) 27 70 - #A
Collector-Emitter Saturation IC = 10PA, E = 0.1mW / cm2
Voltage VCE (sat) (Note 2) - 0.15 0.4 V
Rise Time tr VCC=5V, IC=2mA, - 6 -
Switchin Time s
g Fall Time tf RL=1000 - 6 - ,1
Peak Sensitivity Wavelength AP - - 870 - nm
Half Value Angle f? rl, - - i 15 - o
Note 1. IL Classification A : 27~80pA, B : 5r-165PA
2. Color temperature=2870°K, Standard Tungsten Lamp
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-09-08 1/4
TOSHIBA TPS618
PRECAUTION
Please be careful of the followings.
1. Soldering temperature : 260°C MAX. Soldering time : 5s MAX.
(Soldering portion of lead : above 2mm from the body of the device)
2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device.
Soldering shall be performed after lead forming.
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
EORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-09-08 2/4
TOSHIBA TPS618
PC - Ta IL - VCE (TYP.)
'it Ta=25°C
lit' A
ts/i, f)
''i,s1,1 g
< 4 E=0.3mW/cm2
0 20 40 60 so 100
AMBIENT TEMPERATURE Ta (°C)
0 0.2 0.4 0.6 0.8 1.0 1.2
IL - E (TYP.) COLLECTOR EMITTER VOLTAGE VCE (V)
1 SPECTRAL RESPONSE (TYP.)
vCE=3v
2 Ta=25°C T _ .
tt A a=25''C
.. 1 t,
0.01 0.1 1 10 50 o 200 400 600 800 1000 1200
RADIANT INCIDENCE E (mW/em2) WAVELENGTH l (nm)
DIRECTIONAL SENSITIVITY CHARACTERISTIC 1.6 RELATIVE IL - Ta (TYP.)
(TYP.) .
E=0.1 W/ 2
(Ta=25°C) F V :‘V cm "
o,',io' 1.2 ’/
2 0.8 r
.4 ,...--""
o-d, 0.4
1.0 0.8 0.6 0.4 0.2 o -20 0 20 40 60 80
RELATIVE SENSITIVITY AMBIENT TEMPERATURE Ta (°C)
1997-09-08 3/4
TOSHIBA TPS618
SWITCHING CHARACTERISTICS
SATURATED OPERATIO . ID - Ta (TYP.)
Ta = 25°C
VCC = 5V
VoUTa 4.6V
SWITCHING TIME (#s)
DARK CURRENT 11300130) (pA)
IO- 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta CC)
1 3 10 30 100
LOAD RESISTANCE RL (k0)
COUPLING CHARACTERISTICS WITH
30 TLN107A
_ l l l l l "l l l l SWITCHING TIME TEST CIRCUIT
, TLN107A IE=4mW/sr
< h...
g 10 "s.
h? '''""s _
e 5 _ Is I - v
E 3 Ta=25°C "s N TL§107A - l: cc orc] L
g TPS618 USING SAMPLE -
8 IL=100pA at E=0.1mW/cm2 N 1 " VOUTV - --
at 1 VCE=3V _ _ RL OUT ___
o IC h N _
tl - N \ td
a 0.5 - - ,
_ V \ \
g 0 3 @>@E 3 \ \ tr
Q q [l \
TLN107A c, l TPS618 \ ,
0.1 0.3 0.5 o 3 5 10 30 50
DISTANCE d (mm)
1997-09-08 4/4
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