TPS606 ,PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANARTOSHIBA TPS606,TPS606(LB)TDQGDG TDQGDG ft lahuvvv,TAPE, CARD READERS Unit in mmPRINTER, TERMINALOPT ..
TPS606(LB) ,PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANARTOSHIBA TPS606,TPS606(LB)TDQGDG TDQGDG ft lahuvvv,TAPE, CARD READERS Unit in mmPRINTER, TERMINALOPT ..
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TPS606-TPS606(LB)
PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
TOSHIBA TPS606,TP5606(LB)
TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
TPS606, TPS606 (LBO
TAPE, CARD READERS
Unit in mm
PRINTER, TERMINAL TPS606
OPTO-ELECTRONIC SWITCH
ct Micro-package (epoxy resin package) _ g.
Double end type : TPS606 M 0.8) ti
DIP type : TPS606 (LB) cu, . i: R
o Mountable at a 2.5mm pitch 3 53 i'
0 High speed response : tr=2ps, tf=3ps(TYP.) / (0.7s) 03i0-1 ().8:e0.1
l,77:t0.2
ct Half value angle : 9%: i20°(TYP.) 1 gig? E w 227i0.2
. , J- . ' m L3i07i02
0 Maximum distance when used as an opto electronic switch 2 _' 0 2sth1)s
().7ce0.1 .1 - . .
TLN104 at DC drive=5mm at TPS606 IL=100luA
MAXIMUM RATINGS (Ta = 25°C)
: REFERENCE VALUE
CHARACTERISTIC SYMBOL RATING UNIT ( )
JEDEC -
Collector-Emir Voltage VCEO 20 V EIA J
Emitter-Collector Voltage VECO 5 V TOSHIB A 0-201
Collector Current 10 20 mA TPS606 (LB)
Collector Power Dissipation PC 50 mW M 1.6 5)
Collector Power Dissipation o O 2 E 31 "il?
Derating(Ta>25°C) APC/ C -0.91 mW/ C r'..':
Operating Temperature Range Topr -25--85 "C H 35:33
Storage Temperature Range Tstg -3(P-100 "C /x'-,; 4.9 iO-S
. d 245:0 5 R (0.8)
Soldering Temperature (3s) Tsol 260 "C g
1* g l"
:1]: F I '
RECOMMENDED OPERATING CONDITION g
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT S.
I lO.5i0.1
Supply Voltage VCC - 5 16 V 0.7i0.1
PIN CONNECTION ( ) I REFERENCE VALUE
1. EMITTER JEDEC -
EIAJ -
TOSHIBA 0-2C101
2. COLLECTOR .
Weight .' 0.08g(TYP.)
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-09-08 1/4
TOSHIBA TPS606,TP5606(LB)
OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dark Current ID VCE = 10V, E = 0 - 0.01 0.1 PA
. VCE=3V, E=0.1mW/cm2
Light Current (Note 1) IL (Note 2) 10 40 - PA
Collector-Emir Saturation IC = 2PA, E = 0.1mW / cm2
Voltage VCE (sat) (Note 2) - 0.2 0.4 V
Peak Sensitivity Wavelength lp - - 720 - nm
Half Vaule Angle " - - i20 - o
. . . Rise time tr VCC = 10V, 10 = 1mA - 2 -
Switching Time Fall Time tf RL-- 1000 (Note 3) - 3 - ,us
Note 1. IL Classification B : 10--30/A, C : 20--60/dk, D : 40--125/Lk
2. Color temperature=2870°K, Standard Tungsten Lamp
3. Switching time test circuit
INPUT VCC
N INPUT PULSE
TLN104
(GaAs LED) OUTPUT ----- - 90%
R OUTPUT PULSE
----- - 10%
PRECAUTION
Please be careful of the followings.
1. If the lead is formed, the lead should be formed at a distance of 0.8mm from the body of the
device. Soldering shall be performed after lead forming. However, in case of TPS605 (LB), no lead
forming shall be performed.
2. Soldering shall be performed within the range shown below.
TPS606 TPS606 (LB)
SOLDERING AREA
2mm 2mm
AREA 2mm AWAY FROM
THE PACKAGE ENDS
961001 EAA2'
O The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-09-08 2/4
TOSHIBA
TPS606,TPS606(LB)
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
LIGHT CURRENT IL (mA)
PC - Ta
0 20 40 60 80
AMBIENT TEMPERATURE Ta (''C)
IL - E (TYP.)
VCE = 3V
Ta = 25°C
1 TE=1g?ilh?VRE
0.1 0.3 1 3 5 10 30 50
RADIANT INCIDENCE E (mW/ern2)
DIRECTIONAL SENSITIVITY CHARACTERISTIC
(TYP.)
(Ta= 25°C)
RADIATION ANGLE
1.0 0.8 0.6 0.4 0.2 0
RELATIVE SENSITIVETY
RELATIVE SENSITIVETY (%) DARK CURRENT 11') (,uA)
RELATIVE OUTPUT (dB)
ID - Ta (TYP.)
40 60 80 100 120
AMBIENT TEMPERATURE Ta (°C)
SPECTRAL RESPONSE (TYP.)
Ta=25°C
600 800 1000 1200
WAVELENGTH I (run)
FREQUENCY CHARACTERISTICS
VCC = 5v, Ta = 25''C
LIGHT SOURCE = TLN 104
(GaAs LED)
RL=1000
10 30 50 100 300500 1000
FREQUENCY f (kHz)
1997-09-08 3/4
TOSHIBA TPS606,TP5606(LB)
SWITCHING CHARACTERISTIEITSYR) RELATIVE IL - T a (TYP.)
INPUT E=o.1mW/cm2
INPUT ' ll 10v PULSEJ_L VCE=3V
TLN104A o TP T OUTPU 90%
U U PULSE 10% 1.6
(GaAs R RL t - _ H
LED) d - - i5
tr tf E //
100 I I Ill I I D 1 2 l
Jr
50 _ N "-RT',' 1 I m /
E arc?" . tr(RL--10kn) [i' "e-'''"
'st 2Rs .. - m 0.8 e--'''"'
E "Ni' _ w" tf(RL--lkn) > m,,--'''"
, t, ‘u E
'G' "to] tr(RL=le) 5
c: 10 I. _ M
a _, s"'S M 0 4
E ",'st _ " .
Q 5 "-A's'iscm N.
E tft 3 " y 's
ti(RL--100n) 'o,S 's 0
td (RL = 1000, 1km/ 'str, - 20 0 20 40 60 80
N 'mm..
1 l l H” l _ l l Wes. "c AMBIENT TEMPERATURE Ta (°C)
0.02 0.05 0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT Ic (mA)
1997-09-08 4/4
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