TPS603A ,PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANARTPS603ATPQEDRAvvv-IPHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mmPHOTOELECTRIC COUNTER¢3.0:|:0.3VARIO ..
TPS60400DBVR ,Q1Features 3 DescriptionThe TPS6040x family of devices generates an1• Inverts Input Supply Voltageunr ..
TPS60400DBVT ,Q17.2 Handling RatingsMIN MAX UNITT Storage temperature range -55°C 150°C °CstgHuman body model (HBM) ..
TPS60400QDBVRQ1 ,Q1Features 3 DescriptionThe TPS6040x-Q1 family of devices generate an1• Qualified for Automotive Appl ..
TPS60401DBVR ,Q1Features 3 DescriptionThe TPS6040x family of devices generates an1• Inverts Input Supply Voltageunr ..
TPS60401DBVT ,Q17.2 Handling RatingsMIN MAX UNITT Storage temperature range -55°C 150°C °CstgHuman body model (HBM) ..
TSM104WAIDT ,QUAD OPERATIONAL AMPLIFIER AND PROGRAMMABLE VOLTAGE REFERENCEapplications like power supplyN = Dual in Line Package (DIP)management or data acquisition systems. ..
TSM104WAIN ,QUAD OPERATIONAL AMPLIFIER AND PROGRAMMABLE VOLTAGE REFERENCEELECTRICAL CHARACTERISTICS+ -V = 5V, V = 0V, T = 25°C (unless otherwise specified) CC CC ambSymbo ..
TSM104WAIN ,QUAD OPERATIONAL AMPLIFIER AND PROGRAMMABLE VOLTAGE REFERENCEABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitVSupply Voltage 36 VCCVDifferential Input ..
TSM104WAIPWR ,Quad OpAmp And Programmable Voltage Reference 16-TSSOP -40 to 105FEATURES TYPICAL APPLICATIONS• Battery Chargers• OPERATIONAL AMPLIFIER• Switch-Mode Power Supplies– ..
TSM104WIDR ,Quad OpAmp And Programmable Voltage Reference 16-SOIC -40 to 105FEATURES TYPICAL APPLICATIONS• Battery Chargers• OPERATIONAL AMPLIFIER• Switch-Mode Power Supplies– ..
TSM104WIDT ,QUAD OPERATIONAL AMPLIFIER AND PROGRAMMABLE VOLTAGE REFERENCETSM104W/AQUAD OPERATIONAL AMPLIFIER ANDPROGRAMMABLE VOLTAGE REFERENCE OPERATIONAL AMPLIFIERS ■ ..
TPS603A
PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANAR
TOSHIBA TPS603A
TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
TPS603A
PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm
PHOTOELECTRIC COUNTER
VARIOUS KINDS OF READERS A
POSITION DETECTION m i';''
CONTROLLER OF HOME ELECTRIC EQUIPMENT Sid tro'
DETECTOR FOR STOBOSCOPIC CONTROL 2
o i3nun resin package
ct Wide half value angle facilitates setting. : (9%: i55°(TYP.) g
o The same size TLN103A is available as an infrared LED. l-l
MAXIMUM RATINGS (Ta = 25°C) ( ): REFERENCE VALUE
CHARACTERISTIC SYMBOL RATING UNIT JEDEC -
Collector-Emitter Voltage VCEO 20 V EIAJ -
Emitter-Collector Voltage VECO 5 V TOSHIBA 0-3FI
Collector Current 10 20 mA Weight I 0.08g (TYP.)
Collector Power Dissipation PC 75 mW PIN CONNECTION
Collector Power Dissipation
o - o 2
Derating (Ta>25°C) APC/ C 1 mW/ C l. EMITTER
Operating Temperature Range Topr -20--75 T 2. COLLECTOR
Storage Temperature Range Tstg -30--100 °C 1
OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dark Current IDaCEO) VCE =10V, E=0 - 0.01 0.1 PA
. VCE =3V, E=0.1mW/cm2
Light Current IL (IC) (Note) 6 20 - PA
Colleetor-Emitter Saturation 1c--1PA, E=O.1mW/ cm2
Voltage VCE (sat) (Note) - 0.2 0.4 V
. . . Rise Time t VCC=10V, IC=1mA - 9 -
Swite Ing lme Fall Time tf RL=1kQ (Fig. 1) - 10 - ps
Peak Sensitivity Wavelength AP - 720 - nm
Half Value Angle f? rl, - uF55 - o
Note .' Color temperature=2870°K, Standard Tungsten Lamp.
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-09-08 1/4
TOSHIBA TPS603A
PRECAUTION
Please be careful of the followings.
1. Soldering temperature : 260°C MAX. Soldering time : 3s MAX.
(Soldering portion of lead : above 1.5mm from the body of the device)
2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device.
Soldering shall be performed after lead forming.
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
EORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-09-08 2/4
TOSHIBA
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
LIGHT CURRENT IL (,uA)
1 SWITCHING TIME TEST CIRCUIT
INPUT V
' Q CC
TLN103A
PC - Ta
0 20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IL - E (TYP.)
3000 VCE = 3V
Ta = 25°C
TEMPERATURE
= 2870°K
0.1 0.3 0.5 l
3 5 10
RADIANTINCIDENCE E (mW/cm2)
30 50 100
INPUT PULSE
TPS603A
- ------_ 90%
OUTPUT PULSE
0 -- ------ -- - 10%
"-tr - : tf
DARK CURRENT 11) 01A)
RELATIVE SENSITIVITY
(TYP.)
2O 4O 60 80 100
AMBIENT TEMPERATURE Ta (°C)
SPECTRAL RESPONSE (TYP.)
Ta=25°C
400 500 600
WAVELENGTH A (nm)
800 900 1000 1100
1997-09-08 3/4
TOSHIBA
TPS603A
DECTIONAL SENSITIVITY CHARACTERI%TIC )
(Ta = 25°C)
RADIATION ANGLE
1.0 0.8 0.6 0.4 0.2 0
RELATIVE SENSITIVETY
SWITCHING CHARACTERISTICS
(TYP.)
Ta=25°c A Vcc INPUT
INPUT ll 10V SULSE
UTPUT 900/
TLN103A R OUTPUT PULSE - 100;
RL td "
t _ "r.
100 rr I , . . r f
.u tf
A 50Y . _ - I I I I
g 30:“ t,(RL=10kQ)
a yt,N'w sd tf(RL=1kQ)
E N) 3
E 10 R, ._ t,(RL=1kQ)
U c- ll
?.5, ",t "cs x ll
ttl _ , ‘
O 5 Npr'
i'ii 3 tfw - tr(RL--100n)" Nt, N, ,
- A ' N.
td(RL--100Q, 1KQ) \ tts,
1 IIIIIII I III Ps...'s"'"
0.03 0.05 0.1 0.3 0.5 1 3 5 10 20
COLLECTOR CURRENT 10 (mA)
RELATIVE OUTPUT (dB)
RELATIVE LIGHT CURRENT
FREQUENCY CHARACTERISTICS
V = 5V
TEE1g 25°C
SOURCE =
TLN103A
RL=1ooQ
lOkQ 5kg
100 300 500 1000
FREQUENCY f (kHz)
RELATIVE IL - Ta (TYP.)
E = 0.1 mW / cm2
VCE = 3V
w,,..-'''''
"e-"'"
1.2 /4/
w,,,--''''
0.8 e--"'''
e,,..-''''"
- 20 0 20 40 60 80
AMBIENT TEMPERATURE Ta (°C)
1997-09-08 4/4
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