TPS5410MDREP ,Enhanced Product 5.5V to 36V, 1A, 500kHz Step Down SWIFT? Converter 8-SOIC -55 to 125ELECTRICAL CHARACTERISTICST = –55°C to 125°C, VIN = 5.5 V to 36 V (unless otherwise noted)JPARAMETE ..
TPS5410QDRQ1 ,Automotive Catalog 5.5V to 36V, 1A, 500kHz Step Down SWIFT(tm) Converter 8-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
TPS54110 ,Low Input Voltage 1.5A Step Down Converter with Adjustable Output VoltageMAXIMUM RATINGS(1)over operating free-air temperature range unless otherwise notedVALUE UNITVIN, SS ..
TPS54110PWP ,Low Input Voltage 1.5A Step Down Converter with Adjustable Output VoltageELECTRICAL CHARACTERISTICST =–40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)JPARAMETER TE ..
TPS54110PWPR ,Low Input Voltage 1.5A Step Down Converter with Adjustable Output Voltagefeatures are a true, high-1% Accuracyperformance, voltage error amplifier that provides• Externally ..
TPS54110PWPRG4 ,3V to 6V Input, 1.5A Synchronous SWIFT? Step-Down Converter 20-HTSSOP -40 to 85These devices have limited built-in ESD protection. The leads should be shorted together or the dev ..
TSD1664CY RMG , Low Vcesat NPN Transistor
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TSD4M150V ,V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuitsABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vros Drain-Source Voltage (Ves = 0) 100 V
V ..
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TSDF1220 ,12 GHz Silicon NPN Planar RF Transistor Document Number 850662 (6) Rev. 6, 30-Jun-00TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RWVishay Semicond ..
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TPS5410MDREP
Enhanced Product 5.5V to 36V, 1A, 500kHz Step Down SWIFT? Converter
TPS5410-EP
www.ti.com......................................................................................................................................................................................... SLVS910 –SEPTEMBER 2009
1-A WIDE INPUT RANGE STEP-DOWN SWIFT™ CONVERTER
Checkfor Samples: TPS5410-EP
1FEATURES APPLICATIONS Consumer: Set-top Box, DVD, LCD Displays Wide Input Voltage Range: 5.5Vto36V Industrial and Car Audio Power Supplies• Upto 1-A Continuous (1.2-A Peak) Output Battery Chargers, High Power LED SupplyCurrent 12-V/24-V Distributed Power Systems• High Efficiency upto 95% Enabledby 110-mΩ
Integrated MOSFET Switch DESCRIPTION• Wide Output Voltage Range: Adjustable Down 1.22V with 1.5% Initial Accuracy Asa member of the SWIFT™ family of DC/DC
regulators, the TPS5410 isa high-output-current
• Internal Compensation Minimizes External PWM converter that integratesa low resistance high
Parts Count side N-channel MOSFET. Included on the substrate
• Fixed 500-kHz Switching Frequency for Small with the listed featuresisa high performance voltage
Filter Size error amplifier that provides tight voltage regulation
accuracy under transient conditions; an
• Improved Line Regulation and Transientundervoltage-lockout circuitto prevent start-up until
Response by Input Voltage Feed Forward the input voltage reaches 5.5 V; an internally set
• System Protected by Over Current Limiting, slow-start circuitto limit inrush currents; anda voltage
Over Voltage Protection and Thermal feed-forward circuit to improve the transient
Shutdown response. Using the ENA pin, shutdown supply
–55°Cto 125°C Operating Junction currentis reducedto 18 μA typically. Other features
Temperature Range include an active high enable, overcurrent limiting,
overvoltage protection and thermal shutdown. To
• Availablein Small 8-Pin SOIC Package reduce design complexity and external component
• For SWIFT Documentation, Application Notes count, the TPS5410 feedback loop is internally
and Design Software, See theTI Websiteat compensated.
www.ti.com/swift The TPS5410 deviceis availablein an easyto use
8-pin SOIC package.TI provides evaluation modules
SUPPORTS DEFENSE, AEROSPACE, and software tools to aid in quickly achieving
AND MEDICAL APPLICATIONS high-performance power supply designs to meet
• Controlled Baseline aggressive equipment development cycles.
Site (–55°C/125°C)(1) factory
