TPS51113DRCR ,4.5V to 13.2V Synchronous Buck Controller with High Current Gate Driver, 300kHz 10-VSON -40 to 85FEATURES DESCRIPTION• Flexible Power Rails: 5 V to 12 VThe TPS51113 and TPS51163 are cost-optimized ..
TPS51113DRCT ,4.5V to 13.2V Synchronous Buck Controller with High Current Gate Driver, 300kHz 10-VSON -40 to 85 . SLUS864 –MAY 2009PACKAGE DISSIPATION RATINGS(1)R HIGH-K BOARD POWER RATING (W) POWER RATING (W)θ ..
TPS51116 ,DDR2 Switcher and LDOMaximum Ratings.. 411.1 Layout Guidelines.... 347.2 ESD Ratings ...... 411.2 Layout Example....... ..
TPS51116PWP ,DDR2 Switcher and LDOPin Functions (continued)NO.NAME I/O DESCRIPTIONPWP RGEVTT 2 24 O Power output for the VTT LDO.VTTG ..
TPS51116PWPG4 ,DDR1, DDR2, DDR3 Switcher and LDO 20-HTSSOP -40 to 85Maximum Ratings(1)over operating free-air temperature range (unless otherwise noted)MIN MAX UNITVBS ..
TPS51116PWPR ,DDR2 Switcher and LDOFeatures... 18.4 Device Functional Modes.... 242 Applications..... 19 Application and Implementatio ..
TSC2046EIPWRG4 ,4-Wire Touch Screen Controller with low voltage digital I/O 16-TSSOP -40 to 85MAXIMUM RATINGS+V and IOVDD to GND . . . . . . . . . . . . . . . . . . . . . −0.3V to +6VCCThis int ..
TSC2046EIRGVR ,4-Wire Touch Screen Controller with low voltage digital I/O and extended ESD protection 16-VQFN -40 to 85SBAS417B − JUNE 2007 − REVISED JANUARY 2008(1)ELECTROSTATIC DISCHARGE SENSITIVITYABSOLUTE
TSC2046EIRGVT ,4-Wire Touch Screen Controller with low voltage digital I/O and extended ESD protection 16-VQFN -40 to 85ELECTRICAL CHARACTERISTICS: V = +2.7V to +5.5V SAt T = −40°C to +85°C, +V = +2.7V, V = 2.5V inter ..
TSC2046IPW ,4-Wire Touch Screen Controller with low voltage digital I/OTSC2046SBAS265G − OCTOBER 2002 − REVISED JANUARY 2008Low-Voltage I/OTOUCH SCREEN CONTROLLER
TSC2046IPWG4 ,4-Wire Touch Screen Controller with low voltage digital I/O 16-TSSOP -40 to 85SBAS265G − OCTOBER 2002 − REVISED JANUARY 2008
TSC2046IPWR ,4-Wire Touch Screen Controller with low voltage digital I/OSBAS265G − OCTOBER 2002 − REVISED JANUARY 2008
TPS51113DRCR-TPS51113DRCT
4.5V to 13.2V Synchronous Buck Controller with High Current Gate Driver, 300kHz 10-VSON -40 to 85
TPS51113, TPS51163 www.ti.com ....................................................................................................................................................................................................... SLUS864 –MAY 2009 SYNCHRONOUS BUCK CONTROLLER WITH HIGH-CURRENT GATE DRIVER Check for Samples :TPS51113 TPS51163 1 FEATURES DESCRIPTION • Flexible Power Rails: 5 V to 12 V The TPS51113 and TPS51163 are cost-optimized, feature rich, single-channel synchronous-buck • Reference: 800 mV ± 0.8% controllers that operates from a single 4.5-V to 13.2-V • Voltage Mode Control supply and can convert an input voltage as low as • Support Pre-biased Startup 1.5 V. • Programmable Overcurrent Protection with The controller implements voltage mode control with Low-Side R Current Sensing DS(on) a fixed 300-kHz (TPS51113) and 600-kHz • Fixed 300-kHz (TPS51113) and 600-kHz (TPS51163) switching frequency. The overcurrent (TPS51163) Switching Frequency (OC) protection employs the low-side R current DS(on) sensing and has user-programmable threshold. The • UV/OV Protections and Power Good Indicator OC threshold is set by the resistor from LDRV_OC • Internal Soft-start pin to GND. The resistor value is read when the • Integrated High-Current Drivers Powered by over-current programming circuit applies 10 μA of VDD current to the LDRV_OC pin during the calibration phase of the start-up sequence. • 10-Pin 3 × 3 SON Package The TPS51113/TPS51163 also supports output APPLICATIONS pre-biased startup. • Server and Desktop Computer Subsystem The integrated gate driver is directly powered by Power Supplies (MCH, IOCH, PCI, Termination) VDD. VDD can be connected to V in some IN • Distributed Power Supplies applications. The strong gate drivers with low • General DC-DC Converters deadtime allow for the utilization of larger MOSFETs to achieve higher efficiency. An adaptive anti-cross conduction scheme is used to prevent shoot-through between the power FETs. TYPICAL APPLICATION CIRCUIT V OUT VDD V C3 IN D1 TPS51113\TPS51163 R6 R4 1 BOOT PGOOD 10 R1 Q1 C5 R3 2 SW VOS 9 L1 + 3 HDRV FB 8 C1 C2 Q2 C6 C7 4 LDRV_OC COMP_EN 7 R V R2 BIAS OUT R5 R 5 GND VDD 6 Enable OC – C4 11 UDG-08105 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2009, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
