TPS28226DRBR ,8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SON -40 to 125Features 2 Applications1• Drives Two N-Channel MOSFETs with 14-ns • Multi-Phase DC-to-DC Converters ..
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TPS28226DRBR-TPS28226DRBT
8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver
Sample & Support & Reference Product Tools & Technical Community Buy Design Folder Documents Software TPS28226 SLUS791A – JULY 2007 – REVISED SEPTEMBER 2015 TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers 1 Features 2 Applications 1• Drives Two N-Channel MOSFETs with 14-ns • Multi-Phase DC-to-DC Converters with Analog or Adaptive Dead Time Digital Control • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With • Desktop and Server VRMs and EVRDs Best Efficiency at 7 V to 8 V • Portable and Notebook Regulators • Wide Power System Train Input Voltage: 3 V Up • Synchronous Rectification for Isolated Power to 27 V Supplies • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude 3 Description The TPS28226 is a high-speed driver for N-channel • Capable to Drive MOSFETs with≥40-A Current complimentary driven power MOSFETs with adaptive per Phase dead-time control. This driver is optimized for use in • High Frequency Operation: 14-ns Propagation variety of high-current one and multi-phase DC-to-DC Delay and 10-ns Rise/Fall Time Allow F – 2 SW converters. The TPS28226 is a solution that provides MHz high efficiency, small size and low EMI emissions. • Capable to Propagate <30-ns Input PWM Pulses The efficiency is achieved by up to 8.8-V gate drive • Low-Side Driver Sink On-Resistance (0.4Ω) voltage, 14-ns adaptive dead-time control, 14-ns Prevents dV/dT Related Shoot-Through Current propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for • 3-State PWM Input for Power Stage Shutdown the lower gate driver holds the gate of power • Space Saving Enable (Input) and Power Good MOSFET below its threshold and ensures no shoot- (Output) Signals on Same Pin through current at high dV/dt phase node transitions. • Thermal Shutdown The bootstrap capacitor charged by an internal diode • UVLO Protection allows use of N-channel MOSFETs in a half-bridge configuration. • Internal Bootstrap Diode • Economical SOIC-8 and Thermally Enhanced 3- (1) Device Information mm x 3-mm DFN-8 Packages PART NUMBER PACKAGE BODY SIZE (NOM) • High Performance Replacement for Popular 3- SOIC (8) 4.90 mm × 3.91 mm TPS28226 State Input Drivers VSON (8) 3.00 mm x 3.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic TPS28226 Vc (4.5V to 8V) Vin (4.5V to 24V) 6 2 VDD BOOT 1 UGATE TL500X 3 PWM PHASE 8 3 VCC Vout OUT 3 7 ENBL FB 3 LGATE 5 GND 3 GND 4 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
