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TPS1120D-TPS1120DR
Dual P-channel Enhancemenent-Mode MOSFET
VGS(th) = –1.5 V Max ESD Protection Up to 2 kV perMIL-STD-883C, Method 3015
descriptionThe TPS1120 incorporates two independent
p-channel enhancement-mode MOSFETs that
have been optimized, by means of the Texas
Instruments LinBiCMOS process, for 3-V or 5-V
power distribution in battery-powered systems. With a maximum V GS(th) of –1.5 V and an I DSS of only 0.5 μA,
the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where
maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic
discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120
includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and
PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in
small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, TJ, from –40°C to 150°C.
AVAILABLE OPTIONS The D package is available taped and reeled. Add an R suffix to device
type (e.g., TPS1120DR). The chip form is tested at 25°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic
fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to
MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than
maximum-rated voltages to these high-impedance circuits.
LinBiCMS is a trademark of .
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