TPS1101DRG4 ,Single P-channel Enhancement-Mode MOSFET 8-SOIC maximum ratings over operating free-air temperature (unless otherwise noted)UNITDrain-to-source vol ..
TPS1120D ,Dual P-channel Enhancemenent-Mode MOSFETmaximum ratings over operating free-air temperature (unless otherwise noted)UNITDrain-to-source vol ..
TPS1120DR ,Dual P-channel Enhancemenent-Mode MOSFETTPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 19 ..
TPS2001CDGKR ,Single Channel, Current-Limited USB Power Distribution Switch 8-VSSOP -40 to 85Features 3 DescriptionThe TPS20xxC and TPS20xxC-2 power-distribution1• Single Power Switch Familysw ..
TPS2001CDGN ,Single Channel, Current-Limited USB Power Distribution Switch 8-MSOP-PowerPAD -40 to 85 SLVSAU6H–JUNE 2011–REVISED APRIL 2016• Added Leakage Current 7• Added the DBV option to Power Swit ..
TPS2001CDGNR ,Single Channel, Current-Limited USB Power Distribution Switch 8-MSOP-PowerPAD -40 to 85Electrical Characteristics: –40°C≤ T≤ 125°C 8J12.3 Trademarks..... 257.8 Timing Requirements: T = T ..
TS4990IQT ,1.2W AUDIO POWER AMPLIFIER WITH ACTIVE LOW STANDBY MODETS49901.2W Audio Power Amplifier withActive-Low Standby Mode
TPS1101D-TPS1101DR-TPS1101DRG4
Single P-channel Enhancement-Mode MOSFET
VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV perMIL-STD-883C, Method 3015
descriptionThe TPS1101 is a single, low-rDS(on), P-channel,
enhancement-mode MOSFET. The device has
been optimized for 3-V or 5-V power distribution
in battery-powered systems by means of the
Texas Instruments LinBiCMOS process. With a
maximum V GS(th) of –1.5 V and an I DSS of only
0.5 μA, the TPS1101 is the ideal high-side switch
for low-voltage, portable battery-management
systems where maximizing battery life is a primary
concern. The low r DS(on) and excellent ac
characteristics (rise time 5.5 ns typical) of the
TPS1101 make it the logical choice for
low-voltage switching applications such as power
switches for pulse-width-modulated (PWM)
controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or
TSSOP (PW) version fits in height-restricted
places where other P-channel MOSFET s cannot.
The size advantage is especially important where
board height restrictions do not allow for an
small-outline integrated circuit (SOIC) package.
Such applications include notebook computers,
personal digital assistants (PDAs), cellular
telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other
P-channel MOSFET s in SOIC packages.
AVAILABLE OPTIONS The D package is available taped and reeled. Add an R suffix to device type (e.g.,
TPS1101DR). The PW package is only available left-end taped and reeled (indicated by
the LE suffix on the device type; e.g., TPS1101PWLE). The chip form is tested at 25°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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(TOP VIEW)NC – No internal connection
D PACKAGE
PW PACKAGE
