TPH7R506NH ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPH8R80ANH ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPI12011N ,TRIPOLAR PROTECTION FOR ISDN INTERFACESFEATURESn BIDIRECTIONAL TRIPLE CROWBARPROTECTION.n PEAK PULSE CURRENT :I = 30 A , 10/1000 μs.PPn BR ..
TPI12011NRL ,TRIBALANCED PROTECTION FOR ISDN INTERFACESTPI8011NTPI12011N®Application Specific DiscretesTRIPOLAR PROTECTIONA.S.D.™FOR ISDN INTERFACES
TPI8011N ,TRIPOLAR PROTECTION FOR ISDN INTERFACESABSOLUTE MAXIMUM RATINGS (T =25°C)ambSymbol Parameter Value UnitI 10/1000 μs 30 APP Peak pulse curr ..
TPI8011NRL ,TRIBALANCED PROTECTION FOR ISDN INTERFACESFEATURESn BIDIRECTIONAL TRIPLE CROWBARPROTECTION.n PEAK PULSE CURRENT :I = 30 A , 10/1000 μs.PPn BR ..
TS3431 ,1.24 Programmable Shunt Voltage ReferenceElectrical Characteristics Table 3. Tamb = 25°C (unless otherwise specified)Symbol Parameter Test ..
TS3431AIZ ,1.24 Programmable Shunt Voltage Referenceabsolute maximum ratingsSymbol Parameter Value UnitV Cathode to Anode Voltage25 VKAI Reverse Breakd ..
TS3431BILT ,1.24 Programmable Shunt Voltage ReferenceElectrical CharacteristicsFigure 1. Reference voltage vs. temperature Figure 4. Test circuit for V ..
TS3431CILT ,1.24V PROGRAMMABLE SHUNT VOLTAGE REFERENCEAbsolute maximum ratings (AMR)Symbol Parameter Value UnitV Cathode to anode voltage 25 VKAI Reverse ..
TS358CS , Dual Operating Amplifier
TS358CS , Dual Operating Amplifier
TPH7R506NH
Power MOSFET (N-ch single 30V<VDSS≤60V)
TPH7R506NH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH7R506NHTPH7R506NHTPH7R506NHTPH7R506NH
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators Motor Drivers DC-DC Converters
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to a small and thin package
(2) High-speed switching
(3) Small gate charge: QSW = 14 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 6.1 mΩ (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
