TPDV1240RG ,40A high-voltage TriacsTPDVxx4040 A high voltage Triacs
TPDV1240RG ,40A high-voltage TriacsFeaturesA2■ On-state current (I ): 40 AT(RMS)■ Max. blocking voltage (V /V ): 1200 V DRM RRMG■ Gate ..
TPDV840 ,ALTERNISTORSFEATURESn High commutation: > 142A/ms (400Hz)n Insulating voltage = 2500V(RMS)G(UL Recognized: EB81 ..
TPH7R506NH ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPH8R80ANH ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPI12011N ,TRIPOLAR PROTECTION FOR ISDN INTERFACESFEATURESn BIDIRECTIONAL TRIPLE CROWBARPROTECTION.n PEAK PULSE CURRENT :I = 30 A , 10/1000 μs.PPn BR ..
TS339CDT ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORELECTRICAL CHARACTERISTICS+ -V = 3V, V = 0V, T = 25°C (unless otherwise specified) CC cc ambSy ..
TS339CN ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit+ 1)18 VVSupply Voltage CC2)V±18 Vid Diffe ..
TS339CN ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORTS339C,I,MMICROPOWER QUAD CMOS VOLTAGE COMPARATORS ■ EXTREMELY LOW SUPPLY CURRENT : 9μA typ / ..
TS339ID ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORELECTRICAL CHARACTERISTICS+ -V = 3V, V = 0V, T = 25°C (unless otherwise specified) CC cc ambSy ..
TS339IDT ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit+ 1)18 VVSupply Voltage CC2)V±18 Vid Diffe ..
TS339IN ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORTS339C,I,MMICROPOWER QUAD CMOS VOLTAGE COMPARATORS ■ EXTREMELY LOW SUPPLY CURRENT : 9μA typ / ..
TPDV1240RG
40A high-voltage Triacs
March 2011 Doc ID 18270 Rev 1 1/7
TPDVxx4040 A high voltage Triacs
Features On-state current (IT(RMS)): 40 A Max. blocking voltage (VDRM/VRRM): 1200V Gate current (IGT): 200 mA Commutation @ 10 V/µs: up to 142 A/ms Noise immunity: 500 V/µs insulated package: 2,500 V rms (UL recognized: E81734).
DescriptionThe TPDVxx40 series use a high performance
alternistor technology.
Featuring very high commutation levels and high
surge current capability, this family is well adapted
to power control on inductive load (motor,
transformer...)
Table 1. Device summary
Characteristics TPDVxx402/7 Doc ID 18270 Rev 1
1 Characteristics
Table 2. Absolute ratings (limiting values) A1, A2, gate terminals to case for 1 minute
Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified) For either polarity of electrode A2 voltage with reference to electrode A1.
TPDVxx40 CharacteristicsDoc ID 18270 Rev 1 3/7
Table 4. Gate characteristics (maximum values)
Table 5. Thermal resistance
Figure 1. Max. rms power dissipation versus
on-state rms current (F= 50 Hz).
(curves limited by (dI/dt)c)
Figure 2. Max. rms power dissipation and
max. allowable temperatures
(Tamb and Tcase) for various Rth
Figure 3. On-state rms current versus case
temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration
Characteristics TPDVxx404/7 Doc ID 18270 Rev 1
Figure 9. Safe operating area below curve
Figure 5. Relative variation of gate trigger
current and holding current versus
junction temperature
Figure 6. Non repetitive surge peak on-state
current versus number of cycles
Figure 7. Non-repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding values of I2t
Figure 8. On-state characteristics (maximum
values)
TPDVxx40 Package informationDoc ID 18270 Rev 1 5/7
2 Package information Epoxy meets UL94,V0 Cooling method: C (by conduction) Recommended torque value: 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 6. TOP3 insulated dimensions
Ordering information TPDVxx40
6/7 Doc ID 18270 Rev 1
3 Ordering information
4 Revision history
Table 7. Ordering information
Table 8. Document revision history
