TPDV1240 ,ALTERNISTORS®TPDV640 ---> TPDV1240ALTERNISTORSA2
TPDV1240 ,ALTERNISTORS®TPDV640 ---> TPDV1240ALTERNISTORSA2
TPDV1240 ,ALTERNISTORSFEATURESn High commutation: > 142A/ms (400Hz)n Insulating voltage = 2500V(RMS)G(UL Recognized: EB81 ..
TPDV1240RG ,40A high-voltage TriacsTPDVxx4040 A high voltage Triacs
TPDV1240RG ,40A high-voltage TriacsFeaturesA2■ On-state current (I ): 40 AT(RMS)■ Max. blocking voltage (V /V ): 1200 V DRM RRMG■ Gate ..
TPDV840 ,ALTERNISTORSFEATURESn High commutation: > 142A/ms (400Hz)n Insulating voltage = 2500V(RMS)G(UL Recognized: EB81 ..
TS339CD ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORTS339C,I,MMICROPOWER QUAD CMOS VOLTAGE COMPARATORS ■ EXTREMELY LOW SUPPLY CURRENT : 9μA typ / ..
TS339CDT ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORELECTRICAL CHARACTERISTICS+ -V = 3V, V = 0V, T = 25°C (unless otherwise specified) CC cc ambSy ..
TS339CN ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit+ 1)18 VVSupply Voltage CC2)V±18 Vid Diffe ..
TS339CN ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORTS339C,I,MMICROPOWER QUAD CMOS VOLTAGE COMPARATORS ■ EXTREMELY LOW SUPPLY CURRENT : 9μA typ / ..
TS339ID ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORELECTRICAL CHARACTERISTICS+ -V = 3V, V = 0V, T = 25°C (unless otherwise specified) CC cc ambSy ..
TS339IDT ,MICROPOWER QUAD CMOS VOLTAGE COMPARATORABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit+ 1)18 VVSupply Voltage CC2)V±18 Vid Diffe ..
TPDV1240-TPDV840
ALTERNISTORS
TPDV640 ---> TPDV1240ALTERNISTORS High commutation:> 142A/ms (400Hz) Insulating voltage= 2500V(RMS)(UL Recognized: EB81734) High voltage capability: VDRM= 1200V
FEATURESThe TPDV640 ---> TPDV1240 usea high perfor-
mance passivated glass alternistor technology.
Featuring very high commutation levels and high
surge current capability,this familyis well adapted power controlon inductive load (motor, trans-
former...)
DESCRIPTION
ABSOLUTE RATINGS (limiting values)
TPDV640 ---> TPDV1240
GATE CHARACTERISTICS (maximum values)
PG(AV) =1W PGM= 40W(tp= 20μs) IGM=8A(tp= 20μs) VGM= 16V(tp= 20μs)
THERMAL RESISTANCESFor either polarityof electrodeA2 voltage with referenceto electrodeA1.
ELECTRICAL CHARACTERISTICS
TPDV640 ---> TPDV1240
Fig.3: RMS on-state current versus case temper-
ature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Zth/Rth
Fig.4: Relative variationof thermal impedance
versus pulse duration.
Fig.5: Relative variationof gate trigger current
and holding current versus junction temperature.
Fig.6: Non repetitive surge peak on-state current
versus numberof cycles.
Fig.1: Maximum RMS power dissipation versus
RMS on-state current(F= 50Hz).(Curvesarecut
offby (dI/dt)c limitation)
Fig.2: Correlation between maximum RMS power
dissipation and maximum allowable temperatures
(Tamb and Tcase)for different thermal resistances
heatsink+ contact.
TPDV640 ---> TPDV1240
Fig.7: Non repetitive surge peak on-state current
fora sinusoidal pulse with width:t≤ 10ms, and cor-
responding valueofI2t.
Fig.8: On-state characteristics (maximum values).
Fig.9: Safe operating area.
TPDV640 ---> TPDV1240Information furnishedis believedtobeaccurateandreliable.However,STMicroelectronics assumesnoresponsibility fortheconsequencesof
useofsuchinformationnorfor anyinfringementofpatentsorother rightsofthird parties which mayresultfromitsuse.No licenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice.This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheSTlogoisa registered trademarkof STMicroelectronics 2001 STMicroelectronics- PrintedinItaly-All rights reserved.
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http:// Epoxy meets UL94,V0 Cooling method:C Recommended torque value:0.8 m.N. Maximum torque value:1 m.N.
OTHER INFORMATION
PACKAGE MECHANICAL DATATOP3 (Plastic)
:
www.ic-phoenix.com
.
