TPCP8102 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 0.17±0.02-0.11+0.131.12Characteristic Symbol Rating Unit -0.12 ..
TPCP8201 ,MOSFET TPC SeriesApplications M A 0.0585 • Lead(Pb)-Free • Low drain-source ON resistance : R = 38 mΩ (typ.) D ..
TPCP8201 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnitSingle-device operation R 84.5th (ch-a) (1)Th ..
TPCP8202 , Portable Equipment Applications Motor Drive Applications DC_DC Converters
TPCP8302 ,Power MOSFET (P-ch dual)Thermal Characteristics Characteristic Symbol MaxUnitSingle-device operation R 84.5th (ch-a) (1)The ..
TPCP8401 ,MOSFET TPC SeriesTPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOS / N Channe ..
TS2431ACX RF , Adjustable Precision Shunt Regulator
TS2431AILT ,PROGRAMMABLE SHUNT REFERENCETS2431PROGRAMMABLE SHUNT VOLTAGE REFERENCE ■ ADJUSTABLE OUTPUT VOLTAGE2.5 to 24V■ SEVERAL PRE ..
TS2431BILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS2431ILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TPCP8102
Power MOSFET (P-ch single)
TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS Ⅳ)
TPCP8102 Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement model: Vth = -0.45 to -1.2 V
(VDS = -10 V, ID = -200 μA)
Absolute Maximum Ratings (Ta = 25°C) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration Marking (Note 5) Weight: 0.017 g (typ.) 7 6 5
8 7 6 5
