TPCP8006 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) ＋0.131.12 －0.12 ＋0.131.12 －0.12 Characteristic Symbol Rating U ..
TPCP8101 , TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCP8102 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 0.17±0.02-0.11+0.131.12Characteristic Symbol Rating Unit -0.12 ..
TPCP8201 ,MOSFET TPC SeriesApplications M A 0.0585 • Lead(Pb)-Free • Low drain-source ON resistance : R = 38 mΩ (typ.) D ..
TPCP8201 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnitSingle-device operation R 84.5th (ch-a) (1)Th ..
TPCP8202 , Portable Equipment Applications Motor Drive Applications DC_DC Converters
TS2431ACX RF , Adjustable Precision Shunt Regulator
TS2431AILT ,PROGRAMMABLE SHUNT REFERENCETS2431PROGRAMMABLE SHUNT VOLTAGE REFERENCE ■ ADJUSTABLE OUTPUT VOLTAGE2.5 to 24V■ SEVERAL PRE ..
TS2431BILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS2431ILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TPCP8006
Power MOSFET (N-ch single VDSS≤30V)
TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
TPCP8006 Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e.operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.017g (typ.)
Circuit Configuration
Marking (Note 5) 1 2 3 4
8 7 6 5
Lot No.
1 2 3 4
8 7 6 5
