TPCP8005-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) +0.10.28-0.11Characteristic Symbol Rating Unit 1. Source 5. D ..
TPCP8006 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) ＋0.131.12 －0.12 ＋0.131.12 －0.12 Characteristic Symbol Rating U ..
TPCP8101 , TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCP8102 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 0.17±0.02-0.11+0.131.12Characteristic Symbol Rating Unit -0.12 ..
TPCP8201 ,MOSFET TPC SeriesApplications M A 0.0585 • Lead(Pb)-Free • Low drain-source ON resistance : R = 38 mΩ (typ.) D ..
TPCP8201 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnitSingle-device operation R 84.5th (ch-a) (1)Th ..
TS2431ACX RF , Adjustable Precision Shunt Regulator
TS2431AILT ,PROGRAMMABLE SHUNT REFERENCETS2431PROGRAMMABLE SHUNT VOLTAGE REFERENCE ■ ADJUSTABLE OUTPUT VOLTAGE2.5 to 24V■ SEVERAL PRE ..
TS2431BILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS2431ILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TPCP8005-H
Power MOSFET (N-ch single VDSS≤30V)
TPCP8005-H
8 7 6 5
1 2 3 4 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCP8005-H High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 0.017 g (typ.)
Circuit Configuration
Marking (Note 5) 8 6
1 2 3 5
