TPCP8004 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta=25°C) ＋0.10.28 －0.11 1,2,3 ：SOURCE Characteristics SymbolRating Unit ..
TPCP8005-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) +0.10.28-0.11Characteristic Symbol Rating Unit 1. Source 5. D ..
TPCP8006 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) ＋0.131.12 －0.12 ＋0.131.12 －0.12 Characteristic Symbol Rating U ..
TPCP8101 , TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCP8102 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 0.17±0.02-0.11+0.131.12Characteristic Symbol Rating Unit -0.12 ..
TPCP8201 ,MOSFET TPC SeriesApplications M A 0.0585 • Lead(Pb)-Free • Low drain-source ON resistance : R = 38 mΩ (typ.) D ..
TS2431ACX RF , Adjustable Precision Shunt Regulator
TS2431AILT ,PROGRAMMABLE SHUNT REFERENCETS2431PROGRAMMABLE SHUNT VOLTAGE REFERENCE ■ ADJUSTABLE OUTPUT VOLTAGE2.5 to 24V■ SEVERAL PRE ..
TS2431BILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS2431ILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TPCP8004
Power MOSFET (N-ch single VDSS≤30V)
TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCP8004 Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package High speed switching Small gate charge: Qg = 26nC (typ.) Low drain-source ON-resistance: RDS(ON) = 7mΩ(typ.) High forward transfer admittance: |Yfs| = 21S (typ.) Low leakage current: IDSS = 10μA (max) (VDS = 30V) Enhancement mode: Vth = 1.3 to 2.5V (VDS = 10V, ID = 1mA)
Absolute Maximum Ratings (Ta=25°C) Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.017g(typ.)
8 7 6 5
1 2 3 4
8 7 6 5
Marking (Note 5)
Lot No. 1 2 3 4
Circuit Configuration
