TPCL4203 ,Power MOSFET (N-ch dual)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (t = 10 ..
TPCM8001-H ,MOSFET TPC SeriesApplications • Small footprint due to small and thin package • High speed switching 0.5541• Small ..
TPCP8001-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient R 7 ..
TPCP8002 , TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
TPCP8004 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta=25°C) ＋0.10.28 －0.11 1,2,3 ：SOURCE Characteristics SymbolRating Unit ..
TPCP8005-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) +0.10.28-0.11Characteristic Symbol Rating Unit 1. Source 5. D ..
TS2019M , 10/100 BASE-TX VOICE OVER IP MAGNETICS MODULES
TS2023B , 10 BASE-T ISOLATION TRANSFORMER
TS20P06G , Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers
TS20P06G , Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers
TS2431ACX RF , Adjustable Precision Shunt Regulator
TS2431AILT ,PROGRAMMABLE SHUNT REFERENCETS2431PROGRAMMABLE SHUNT VOLTAGE REFERENCE ■ ADJUSTABLE OUTPUT VOLTAGE2.5 to 24V■ SEVERAL PRE ..
TPCL4203
Power MOSFET (N-ch dual)
TPCL4203
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCL4203TPCL4203TPCL4203TPCL4203
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications
Note: The product(s) described herein should not be used for any other application.
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small, thin package
(2) Low source-source on-resistance: RSS(ON) = 27 mΩ (typ.) (VGS = 4.5 V)
(3) Low leakage current: ISSS = 10 µA (max) (VSS = 24 V)
(4) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA)
(5) Common drain
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Ta
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
