TPCF8B01 ,MOSFET TPC SeriesThermal Characteristics for MOSFET and SBD Characteristics Symbol Max Unit Single-device operation ..
TPCL4203 ,Power MOSFET (N-ch dual)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (t = 10 ..
TPCM8001-H ,MOSFET TPC SeriesApplications • Small footprint due to small and thin package • High speed switching 0.5541• Small ..
TPCP8001-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient R 7 ..
TPCP8002 , TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
TPCP8004 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta=25°C) ＋0.10.28 －0.11 1,2,3 ：SOURCE Characteristics SymbolRating Unit ..
TS2007 ,3W filter free class D audio power amplifier with fixed gainAbsolute maximum ratingsSymbol Parameter Value Unit(1)V Supply voltage 6VCC(2)V Input voltage GND t ..
TS2012EIJT ,Filter-free stereo 2 x 2.8 W class D audio power amplifierAbsolute maximum ratingsSymbol Parameter Value Unit(1)V Supply voltage 6VCC(2)V Input voltage GND t ..
TS2019LF , 10/100 BASE-TX VOICE OVER IP MAGNETICS MODULES
TS2019M , 10/100 BASE-TX VOICE OVER IP MAGNETICS MODULES
TS2023B , 10 BASE-T ISOLATION TRANSFORMER
TS20P06G , Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers
TPCF8B01
MOSFET TPC Series
TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8B01 Notebook PC Applications
Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = -10 ìA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V(VDS =-10 V, ID = -200 ìA) Low forward voltage: VFM = 0.46V(typ.)
Maximum Ratings
MOSFET (Ta = 25°C) Symbol
SBD (Ta = 25°C) Maximum Ratings for MOSFET and SBD (Ta = 25°C) Unit: mm
Weight: 0.011 g (typ.)
Circuit Configuration Marking (Note 7)
