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TPCF8303
MOSFET TPC Series
TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCF8303 Notebook PC Applications
Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-model: Vth = −0.45 to −1.2 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta === = 25°C)
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),
please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
