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TPCF8302
MOSFET TPC Series
TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCF8302 Notebook PC Applications
Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) High forward transfer admittance: |Yfs| = 6.2 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C) Note 1, Note 2, Note 3, Note 4, Note 5 and Note 6: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 0.011 g (typ.)
Circuit Configuration 1 2 3 4 7 6 5
