TPCF8201 ,MOSFET TPC SeriesApplications • Low drain-source ON resistance: R = 38 mΩ (typ.) DS (ON)• High forward transfer a ..
TPCF8301 ,Field Effect TransistorApplications Low drain-source ON resistance: R = 72 mΩ (typ.) DS (ON) High forward transfer ..
TPCF8302 ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol MaxUnitSingle-device operation R 92.6th (ch-a) (1)Th ..
TPCF8303 ,MOSFET TPC SeriesTPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Noteboo ..
TPCF8304 ,MOSFET TPC SeriesThermal Characteristics Characteristic Symbol MaxUnitSingle-device operation R 92.6th (ch-a) (1)The ..
TPCF8402 ,MOSFET TPC SeriesApplications • Low drain-source ON resistance : P Channel R = 60 mΩ (typ.) DS (ON) N Channel ..
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TPCF8201
MOSFET TPC Series
TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8201 Notebook PC Applications
Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta === = 25°C)
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),
please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
