TPCF8104 ,MOSFET TPC Series
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TPCF8104
MOSFET TPC Series
TOSH I BA
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(0-hl0SIV)
TPCF8104
TPCF8104
NOTE BOOK PC APPLICATIONS
PORTABLE EQUIPMENTS APPLICATIONS UNIT:mm
Low Drain - Source ON Resistance ( ) 26 (Typ.) 2.9t 0.1
High Forward Transfer Admittance I I (Typ.) 63 +0.1 =
Low Leakage Current -10 (Max.) ( -3O ) 1l1r'l- 'E 0.025@-
Enhancement - Mode -O.8 -2.0 ( -l() , -hn ) fri-, h i I-I r=16_-n-
MAXIMUM RATINGS Ta 25 - ------- " _______________ - g g
CffARACfERlST[C SYMBOL RATING UNIT : [+3 eil
Drain - Source Voltage -30 I ! i
Drain - Gate Voltage -30 1 Q >4 ' g :2 4L
( 20 ) m1
Gate - Source Voltage i 20 ge
. DC (Notel) -6 if'
Drain Current Pulse (Notel) -24 C.
Drain Power Dissipation (t=5s) 2.5 sts,"
(N0te2a) rt, '
Drain Power Dissipation (t=53) 0.7 g F-t
(N0t62b) 0.475 0.8t 0.05
SinglePulsekvalanche Energy(NOte3) 5.9 I I "
Avalanche Current 3 ._,—1 I-l I _ mjg
Repetitive Avalanche Energy (Note4) 0.25 a.-
Channel Temperature 150
Storage Temperature Range 55 150 1 DRAIN 5 SOURCE
2 DRAIN 6 DRAIN
THERMAL CHARACTERISTICS 3 DRAIN 7 DRAIN
CHARACTERISTICS SYMBOL MAX. UNIT 4 GATE 8 DRAIN
Thermal Resistance, Channel to ( ) 50.0
Ambient (t=5s) (Note2a)
Thermal Resistance, Channel to ( ) 178.6
Ambient (t=5s) (Note2b)
Notel, Note2, Note3, Note4, NoteS Please see next page. TOSHIBA
THIS TRANSISTOR IS AN ELECTROSTATIC SENSITIVE DEVICE. Circuit Configuration
PLEASE HANDLE WITH CAUTION.
8 7 6 5
|_l|_l|_l|_l
TO SH I i3 A
T P CF8 1 O 4
ELECTRICAL CHARACTERISTICS Ta 25
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current i 16 O l 10
Drain Cut-off Current -30 0 -10
Drain-Source Breakdown f ) -10 0 -30
Voltage f ) -10 20 -15
Gate Threshold Voltage -10 -lm -0.8 -2,()
Drain-Source 0N Resistance ( ) -4.5 3 37 46 m
-10 -3 26 33
Forward Transfer Admittance l l -10 -3 TBO TBO
Input Capacitance -10 0 TBO
Reverse Transfer Capacitance 1 TBO
Output Capacitance TBO
Rise Time OV lo=-3.OA X(?UT TBO
Switching Turn-on Time Mrs CL- r, Ir, RES TBO
Time Fall Time 4.7 35 TBO
Turn-off Time Duty l7o,tw--l0us Va, -15V TBO
Total Gate Charge (Gate-Source TBO
Plus Gate-Drain) -24 -10
Cate-Source Charge -6 TBO
Gate-Drain(“Miller”)Charge TBO
SOURCE - DRAIN DIODE RATINGS ANI) CHARACTERISTICS Ta 25
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Pulse Drain Reverse Current -24
(Notel)
Diode Forward Voltage -6 0 1.2
Note2:
(a) Device mounted on glass-epoxy board (a)
N0te3:
N0te4:
VDDz-24V, Tch=25
25.4x 25.4x 0.8
(Unit in mm)
(initial),L=0.5mH, Rc=25
Repetitive rating ; Pulse Width Limited by Max. Channel Temperature.
, IM=-3.OA
Please use devices on condition that the channel temperature is below 150
25 4x 25.4x 0.8
(b) Device mounted on glass-epoxy board (b)
(Unit in mm)
TOSHIBA TPCF8104
RESTRICTIONS ON PRODUCT USE 000mm
. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ot
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
. The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
. The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
. The information contained herein is subject to change without notice.
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