TPCF8001 ,MOSFET TPC SeriesApplications _ Unit mm0.3 '0.11-o 9L.__..{$011259 '. Low drain-source ON resistance: RDS (ON) = 19 ..
TPCF8002 ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristics Symbol MaxUnitThermal resistance, channel to ambient (t = ..
TPCF8101 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment ApplicationsTPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebo ..
TPCF8102 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment ApplicationsApplications Low drain-source ON resistance: R = 24 mΩ (typ.) DS (ON) High forward transfer ..
TPCF8104 ,MOSFET TPC Series
TPCF8105 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless o ..
TS1874AIYPT ,1.8V min. voltage supply, micropowerTS187x, TS187xA1.8 V input/output, rail-to-rail, low power operational amplifiersDatasheet — produc ..
TS1874ID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both I/O Rail to Rail.N. N.C. C. 1 1 8 8 N. N.C. C.The common mode input voltage extends 2 ..
TS1874IDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications.O Ou utput 1 tput 1 1 1 8 8 VC VCC CAPPLICATIONInv Inve er rt tiing In ng Input 1 put ..
TS1874IN ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications.O Ou utput 1 tput 1 1 1 8 8 VC VCC CAPPLICATIONInv Inve er rt tiing In ng Input 1 put ..
TS1874IPT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise spec ..
TS1874IYDT ,1.8V min. voltage supply, micropowerFeaturesTS1871ILT■ Operating range from V = 1.8 to 6 VCCOut V1 5CC+■ Rail-to-rail input and outputV ..
TPCF8001
MOSFET TPC Series
T©SIHIIIIA TPCF8001
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IO)
TPC F 80m
Notebook PC Applications
. . . Unit mm
Portable Equipment Applications _
2.9 l 0.1
o 3 '0.ll-0 o. -
u wr-'-'HiiiliCi."igt" Ex
. Low drain-source ON resistance: RDS (ON) = 19 m9 (typ.) N-l P"-N A r: re...,s _-_f
. High forward transfer admittance: lstl = 8 S (typ.) - - ii ii),
. Low leakage current: IDSS = 10 PA (max) (VDS = 30 V) i 5 'e 73;
- . - l u...‘ R.-..' ".-a 4 --,
o Enhancement model: Vth - 1.3 to 2.5 V E3134
(VDs = 10 V, ID = 1mA) ccccccccllf"
Maximum Ratings (Ta = 25°C) iN-e
i,'si'i'. -_k
Characteristics Symbol Rating Unit ii. 1 il-',.?,''.
'f-'. "r''-" "Q
Drain-source voltage Voss 30 V ‘35 g
Drain-gate voltage (Res = 20 km) VDGR 30 v to' "llt3tTl
1. Drag 5. Sou
Gate-source voltage Mass , 1:20 V 2. DH“: 6. Dmirnce
DC Note 1 I 7 3. Drain 7. Drain
Drain current ( ) D A 4. Gate 8. Drain
Pulsed (Note 1) lop 28
Drain power dissipation (t = 5 s) JEDEC -
(Note 2a) PD 2.5 w
D . di . ti (t 5 ) JEITA -
ran power Issxpa Ion = s P 0.7 W
(Note 2b) D TOSHIBA 2-3U1A
Single pulse avalanche energy (Note 3) EAS 8 mJ Weight: O.011 g (typ.)
Avalanche current IAR 3.5 A
Repetitive avalanche energy (Note 4) EAR 0.25 mJ
Channel temperature Tch 150 "C Circuit Configuration
Storage temperature range Tstg -55-150 ''C 8 7 6 5
f-lf-li-lf-l
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with l_l I_I LU Ll
caution. 1 2 3 4
Marking (Note til
|_l Fl |_I |_l
cl |_l LI |_l
1 2003-02-21
TCDSHIIIA TPCF8001
Thermal Characteristics
Characteristics Symbol Max Unit
. = 5 .
Thermal resistance, channel to ambient ((tNotesga) Rm (ch-a) 50.0 CMI
Thermal resistance, channel to ambient ((13:21)) Rm (tsh-a) 178.6 "CMI
Note I: Please use devices on condition that the channel temperature is below 150''C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 FR-4
25.4 x 25.4 x 0.8 25.4 x 25.4 x 0.8
Unit: (mm) Unit: (mm)
Note 3: VDD = 24 V, Tch = 25''C (initial), L = 0.5 mH, RG = 25 C2, IAR = 3.5 A
Note 4: Repetitive rating: pulse width limited by Max. Channel temperature.
Note 5: Black round marking "O'' locates on the left lower side of parts number ''F3A' indicates terminal No.1.
2 2003-02-21
Tti3SRllllBa TPCF8001
Electrical Characteristics (Ta = 25''C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current less VGS = :16 V, VDs = O V -.- - 110 M
Drain cut-off current loss VDS = 30 V, VGs = O V - - 10 pA
V R DSS I =10mA,VGs=0V 30 - -
Drain-source breakdown voltage (B ) D V
V(BR)DSX ID--10mA,VGs---20V 15 - -
Gate threshold voltage vm Vos = 10 V, ID = 1mA 1.3 - 2.5 V
Vas = 4.5 V, ID = 3.5 A - 24 31
Drain-source ON resistance RDS (ON) mQ
VGS=10 V.lo=3.5A - 19 23
Forward transfer admittance lYisl Vos = 10 V, ID = 3.5A 4 8 - S
Input capacitance Cass - 1270 -
Reverse transfer capacitance Crss Vos = 10 V, Vas = 0 V, f-- 1 MHz - 150 - pF
Output capacitance Coss - 190 -
Rise time tr 10 V ID = 3.5 A - 3.8 -
Tum-on time ton g - 9.4 -
Switching time a I' ns
Fall time tt ti. i:' - 8.4 -
VDD = 15 V
Tum-oft time - 4O -
ttstr Duty§1%,tw=10ps
Total gate charge - -
(gate-source plus gate-drain) th 26.4
VDD = 24 V, VGS = 10 V, nC
Gate-source charge ths ID = 7.0 A - 3.6 -
Gate-drain (''miller") charge di - 6.2 -
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current Pulse (Note 1) IDRP - - - 28 A
Forward voltage (diode) VDSF IDR = 7.0 A, Vas = O V - - " .2 V
T©SIHIIIBA TPCF8001
RESTRICTIONS ON PRODUCT USE
. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products spetiications. Also, please keep in mind the precautions and
conditions set forth in the 'Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook' etc..
000707EM
o The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (''Unintended Usage''). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer‘s own risk.
q The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
. The information contained herein is subject to change without notice.
4 2003-02-21
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