TPCC8A01-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.2 °C ..
TPCC8A01-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCF8001 ,MOSFET TPC SeriesApplications _ Unit mm0.3 '0.11-o 9L.__..{$011259 '. Low drain-source ON resistance: RDS (ON) = 19 ..
TPCF8002 ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristics Symbol MaxUnitThermal resistance, channel to ambient (t = ..
TPCF8101 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment ApplicationsTPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebo ..
TPCF8102 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment ApplicationsApplications Low drain-source ON resistance: R = 24 mΩ (typ.) DS (ON) High forward transfer ..
TS1874AIN ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSTS1871TS1872TS18741.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1874AIPT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise spec ..
TS1874AIYDT ,1.8V min. voltage supply, micropowerfeatures make the TS187x family ideal for TS187x TS1871 TS1872 TS1874sensor interface, battery supp ..
TS1874AIYPT ,1.8V min. voltage supply, micropowerTS187x, TS187xA1.8 V input/output, rail-to-rail, low power operational amplifiersDatasheet — produc ..
TS1874ID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both I/O Rail to Rail.N. N.C. C. 1 1 8 8 N. N.C. C.The common mode input voltage extends 2 ..
TS1874IDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications.O Ou utput 1 tput 1 1 1 8 8 VC VCC CAPPLICATIONInv Inve er rt tiing In ng Input 1 put ..
TPCC8A01-H
Power MOSFET (N-ch single VDSS≤30V)
TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPCC8A01-H High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Built-in a Schottky barrier diode
Low forward voltage: VDSF = −0.6 V (max)
• High-speed switching Small gate charge: QSW = 4.1 nC (typ.) Low drain-source ON-resistance:
RDS (ON) = 9.0 mΩ (typ.) (VGS = 4.5 V) High forward transfer admittance: |Yfs| = 52 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
Weight: 0.02 g (typ.)
Circuit Configuration 8 6
1 2 3 5
