TPCC8131 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TPCC8A01-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.2 °C ..
TPCC8A01-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCF8001 ,MOSFET TPC SeriesApplications _ Unit mm0.3 '0.11-o 9L.__..{$011259 '. Low drain-source ON resistance: RDS (ON) = 19 ..
TPCF8002 ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristics Symbol MaxUnitThermal resistance, channel to ambient (t = ..
TPCF8101 ,Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment ApplicationsTPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebo ..
TS1872IYDT ,1.8V min. voltage supply, micropowerapplications.TS187xA TS1871A TS1872A TS1874ANovember 2012 Doc ID 6992 Rev 7 1/25This is information ..
TS1874AID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications (Toys)+ +N Non I on In nv ve er rt tiing Inp ng Inpu ut 2 t 2V VDD DD 4 4 5 5■ Portabl ..
TS1874AIDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +1.8V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise sp ..
TS1874AIN ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSTS1871TS1872TS18741.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1874AIPT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise spec ..
TS1874AIYDT ,1.8V min. voltage supply, micropowerfeatures make the TS187x family ideal for TS187x TS1871 TS1872 TS1874sensor interface, battery supp ..
TPCC8131
Power MOSFET (P-ch single)
TPCC8131
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCC8131TPCC8131TPCC8131TPCC8131
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small, thin package
(2) Low drain-source on-resistance: RDS(ON) = 13.5 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)
(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
