TPCC8105 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (T = 25°C) a Characteristic Symbol Rating Unit Drain-source voltage V − ..
TPCC8131 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TPCC8A01-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.2 °C ..
TPCC8A01-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V ..
TPCF8001 ,MOSFET TPC SeriesApplications _ Unit mm0.3 '0.11-o 9L.__..{$011259 '. Low drain-source ON resistance: RDS (ON) = 19 ..
TPCF8002 ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristics Symbol MaxUnitThermal resistance, channel to ambient (t = ..
TS1872IYDT ,1.8V min. voltage supply, micropowerapplications.TS187xA TS1871A TS1872A TS1874ANovember 2012 Doc ID 6992 Rev 7 1/25This is information ..
TS1874AID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications (Toys)+ +N Non I on In nv ve er rt tiing Inp ng Inpu ut 2 t 2V VDD DD 4 4 5 5■ Portabl ..
TS1874AIDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +1.8V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise sp ..
TS1874AIN ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSTS1871TS1872TS18741.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1874AIPT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise spec ..
TS1874AIYDT ,1.8V min. voltage supply, micropowerfeatures make the TS187x family ideal for TS187x TS1871 TS1872 TS1874sensor interface, battery supp ..
TPCC8105
Power MOSFET (P-ch single)
TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
TPCC8105 Lithium Ion Battery Applications
Power Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance:
RDS (ON) = 6.0 mΩ (typ.)( VGS = −10 V) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.02 g (typ.)
Circuit Configuration 8 6
1 2 3 5
