TPCC8076 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPCC8093 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TPCC8103 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V −30 V ..
TPCC8104 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TPCC8105 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (T = 25°C) a Characteristic Symbol Rating Unit Drain-source voltage V − ..
TPCC8131 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TS1872AIN ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +1.8V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise sp ..
TS1872AIYDT ,1.8V min. voltage supply, micropowerAbsolute maximum ratings and operating conditions TS187x, TS187xA Table 3. Operating condi ..
TS1872ID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +3V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise spec ..
TS1872IDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSELECTRICAL CHARACTERISTICSV = +1.8V, V = 0V, R , C connected to V /2, T = 25°C (unless otherwise sp ..
TS1872IN ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both I/O Rail to Rail.N. N.C. C. 1 1 8 8 N. N.C. C.The common mode input voltage extends 2 ..
TS1872IPT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSTS1871TS1872TS18741.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TPCC8076
Power MOSFET (N-ch single 30V<VDSS≤60V)
TPCC8076
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8076TPCC8076TPCC8076TPCC8076
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V)
(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
