TPCC8007 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPCC8062-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPCC8064-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPCC8073 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPCC8076 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless other ..
TPCC8093 ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TS1871I ,1.8V/ INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage - note 1 7 VCCV Differential In ..
TS1871ID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSapplications (Toys)+ +N Non I on In nv ve er rt tiing Inp ng Inpu ut 2 t 2V VDD DD 4 4 5 5■ Portabl ..
TS1871ID ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit1)V7VSupply voltage CC2)V±1 Vid Differenti ..
TS1871IDT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSTS1871TS1872TS18741.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1871ILT ,1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPSABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit1)V7VSupply voltage CC2)V±1 Vid Differenti ..
TS1871IYLT ,1.8V Input/Output Rail-to-Rail Low Power Operational Amplifiersapplications (toys) 3 3 6 6 In In2 2- -+ +In In2 2+ +V V 4 4 5 5■ Portable communication devices (c ..
TPCC8007
Power MOSFET (N-ch single VDSS≤30V)
TPCC8007
MOSFETs Silicon N-channel MOS (U-MOS)
TPCC8007TPCC8007TPCC8007TPCC8007
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Notebook PCs Mobile Handsets
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
(4) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Ta
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
